參數(shù)資料
型號： ZXMC6A09DN8TC
廠商： ZETEX PLC
元件分類： JFETs
英文描述： COMPLEMENTARY 60V ENHANCEMENT MODE MOSFET
中文描述： 5.1 A, 60 V, 0.045 ohm, 2 CHANNEL, N AND P-CHANNEL, Si, POWER, MOSFET
封裝： SO-8
文件頁數(shù)： 2/10頁
文件大?。?/td> 290K
代理商： ZXMC6A09DN8TC
ZXMC6A09DN8
ISSUE 3 - AUGUST 2004
2
PARAMETER
SYMBOL
VALUE
UNIT
J unction to Ambient
(a)(d)
R
θ
J A
100
°C/W
J unction to Ambient
(b)(e)
R
θ
J A
69
°C/W
J unction to Ambient
(b)(d)
R
θ
J A
58
°C/W
THERMAL RESISTANCE
Notes:
(a) For a dual device surface mounted on 25mm x 25mm FR4 PCB with coverage of single sided 1oz copper in still air conditions.
(b) For a dual device surface mounted on FR4 PCB measured at t
10 sec.
(c) Repetitive rating 25mm x 25mm FR4 PCB, D=0.02 pulse width=300μs - pulse width limited by maximum junction temperature.
(d) For a dual device with one active die.
(e) For dual device with 2 active die running at equal power.
PARAMETER
SYMBOL
N-Channe
l
P-Channel
UNIT
Drain-Source Voltage
V
DS S
60
-60
V
Gate-Source Voltage
V
GS
20
20
V
Continuous Drain Current@V
GS
=10V; T
A
=25 C
(b)(d)
@V
GS
=10V; T
A
=25 C
(b)(d)
@V
GS
=10V; T
A
=25 C
(a)(d)
I
D
5.1
4.1
3.9
-4.8
-3.8
-3.7
A
A
Pulsed Drain Current
(c)
I
DM
25.4
-23.8
A
Continuous Source Current (Body Diode)
(b)
I
S
3.5
-3.3
A
Pulsed Source Current (Body Diode)
(c)
I
S M
25.4
-23.8
A
Power Dissipation at T
A
=25°C
(a)(d)
Linear Derating Factor
P
D
1.25
10
W
mW/°C
Power Dissipation at T
A
=25°C
(a)(e)
Linear Derating Factor
P
D
1.8
14
W
mW/°C
Power Dissipation at T
A
=25°C
(b)(d)
Linear Derating Factor
P
D
2.1
17
W
mW/°C
Operating and Storage Temperature Range
T
j
:T
stg
-55 to +150
°C
ABSOLUTE MAXIMUM RATINGS
相關(guān)PDF資料
PDF描述
ZXMD63C02X 20V DUAL N AND P-CHANNEL ENHANCEMENT MODE MOSFET
ZXMD63C02XTA TWEEZER CURVED PRECISION TIP
ZXMD63C02XTC TWEEZER STRAIGHT FINE TIP
ZXMD63C03X TIP REPLACEMENT SCREWDR .062,0
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
ZXMD63C02X 制造商:Diodes Incorporated 功能描述:MOSFET DUAL NP MSOP8 制造商:Diodes Incorporated 功能描述:MOSFET, DUAL, NP, MSOP8 制造商:Diodes Incorporated 功能描述:MOSFET, N & P CH, DUAL, 30V, 2.4A, MSOP-8; Transistor Polarity:N and P Channel; Continuous Drain Current Id:2.4A; Drain Source Voltage Vds:30V; On Resistance Rds(on):130mohm; Rds(on) Test Voltage Vgs:4.5V; Power Dissipation Pd:1.25W ;RoHS Compliant: Yes
ZXMD63C02X 制造商:Diodes Incorporated 功能描述:MOSFET DUAL NP MSOP8
ZXMD63C02XTA 功能描述:MOSFET 20V N&P Chnl HDMOS RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
ZXMD63C02XTC 功能描述:MOSFET 20V N&P Chnl HDMOS RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
ZXMD63C03X 制造商:Diodes Incorporated 功能描述:MOSFET DUAL NP MSOP8 制造商:Diodes Incorporated 功能描述:MOSFET, DUAL, NP, MSOP8 制造商:DIODES 功能描述:MOSFET, DUAL, NP, MSOP8, Transistor Polarity:N and P Channel, Continuous Drain C 制造商:Diodes Incorporated 功能描述:MOSFET, DUAL, NP, MSOP8, Transistor Polarity:N and P Channel, Continuous Drain C 制造商:Diodes Incorporated 功能描述:MOSFET, DUAL, NP, MSOP8, Transistor Polarity:N and P Channel, Continuous Drain Current Id:2.3A, Drain Source Voltage Vds:30V, On Resistance Rds(on):135mohm, Rds(on) Test Voltage Vgs:10V, Threshold Voltage Vgs:1V, No. of Pins:8 , RoHS Compliant: Yes
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