參數(shù)資料
型號： ZXMC3A18DN8
廠商： Zetex Semiconductor
英文描述： COMPLEMENTARY 30V ENHANCEMENT MODE MOSFET
中文描述： 互補(bǔ)30V的增強(qiáng)型MOS管
文件頁數(shù)： 7/8頁
文件大小： 187K
代理商： ZXMC3A18DN8
ZXMC3A18DN8
S E M IC O N D U C T O R S
DRAFT ISSUE C - J UNE 2003
7
ADVANCE INFORMATION
PARAMETER
SYMBOL
MIN.
TYP.
MAX.
UNIT CONDITIONS
STATIC
Drain-Source Breakdown Voltage
V
(BR)DS S
I
DS S
I
GS S
V
GS (th)
R
DS (on)
-30
V
I
D
= -250 A, V
GS
=0V
V
DS
=-30V, V
GS
=0V
V
GS
=±20V, V
DS
=0V
I
D
= 250 A, V
DS
=V
GS
V
GS
= -10V, I
D
= -4.8A
V
GS
= -4.5V, I
D
= -4.0A
V
DS
= -15V, I
D
= -4.8A
Zero Gate Voltage Drain Current
-1.0
A
Gate-Body Leakage
100
nA
Gate-Source Threshold Voltage
-1.0
V
Static Drain-Source On-State
Resistance
(1)
0.035
0.050
Forward Transconductance
(1) (3)
DYNAMIC
(3)
g
fs
tbd
S
Input Capacitance
C
iss
C
oss
C
rss
1630
pF
V
DS
= -15V, V
GS
=0V
f=1MHz
Output Capacitance
320
pF
Reverse Transfer Capacitance
SWITCHING
(2) (3)
210
pF
Turn-On-Delay Time
t
d(on)
t
r
t
d(off)
t
f
Q
g
9.2
ns
V
DD
= -15V, I
D
=-1A
R
G
6.0 ,
V
GS
= 10V
Rise Time
18
ns
Turn-Off Delay Time
96
ns
Fall Time
60
ns
Gate Charge
tbd
nC
V
DS
= -15V, V
GS
= -5V
I
D
= -5.0A
Total Gate Charge
Q
g
Q
gs
Q
gd
41
nC
V
DS
= -15V, V
GS
= -10V
I
D
= -5.0A
Gate-Source Charge
5.2
nC
Gate-Drain Charge
7.3
nC
SOURCE-DRAIN DIODE
Diode Forward Voltage
(1)
V
S D
-0.95
V
T
j
=25°C, I
S
= -tbd,
V
GS
=0V
T
j
=25°C, I
F
= -tbd,
di/dt=100A/ s
Reverse Recovery Time
(3)
Reverse Recovery Charge
(3)
t
rr
Q
rr
tbd
ns
tbd
nC
P-Channel
ELECTRICAL CHARACTERISTICS
(at T
amb
= 25°C unless otherwise stated)
NOTES
(1) Measured under pulsed conditions. Pulse width
(2) Switching characteristics are independent of operating junction temperature.
(3) For design aid only, not subject to production testing.
300ms; Duty cycle
2%.
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