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參數(shù)資料
| 型號： | ZXMC3A18DN8 |
| 廠商： | Zetex Semiconductor |
| 英文描述： | COMPLEMENTARY 30V ENHANCEMENT MODE MOSFET |
| 中文描述： | 互補(bǔ)30V的增強(qiáng)型MOS管 |
| 文件頁數(shù)： | 2/8頁 |
| 文件大?。?/td> | 187K |
| 代理商： | ZXMC3A18DN8 |
ZXMC3A18DN8
S E M IC O N D U C T O R S
DRAFT ISSUE C - J UNE 2003
ADVANCE INFORMATION
2
PARAMETER
SYMBOL
VALUE
UNIT
J unction to Ambient
(a) (d)
R
J A
100
°C/W
J unction to Ambient
(a) (e)
R
J A
70
°C/W
J unction to Ambient
(b) (d)
R
J A
60
°C/W
NOTES
(a) For a device surface mounted on 25mm x 25mm FR4 PCB with high coverage of single sided 1oz copper, in still air conditions.
(b) For a device surface mounted on FR4 PCB measured at t
10 sec.
(c) Repetitive rating - pulse width limited by maximum junction temperature. Pulse width 300 s, d = 0.02. Refer to Transient Thermal Impedance
graph.
(d) For device with one active die.
(e) For device with two active die running at equal power.
THERMAL RESISTANCE
PARAMETER
SYMBOL
LIMIT
UNIT
Drain-Source Voltage
V
DS S
V
GS
30
-30
V
Gate-Source Voltage
±20
±20
V
Continuous Drain Current
(V
GS
= 10V; T
A
=25°C)
(b)(d)
(V
GS
= 10V; T
A
=70°C)
(b)(d)
(V
GS
= 10V; T
A
=25°C)
(a)(d)
I
D
7.6
6.1
5.8
-6.3
-5.0
-4.8
A
A
A
Pulsed Drain Current
(c)
Continuous Source Current (Body Diode)
(b)
Pulsed Source Current (Body Diode)
(c)
Power Dissipation at T
A
=25°C
(a) (d)
Linear Derating Factor
Power Dissipation at T
A
=25°C
(a) (e)
Linear Derating Factor
Power Dissipation at T
A
=25°C
(b) (d)
Linear Derating Factor
I
DM
I
S
I
S M
P
D
37
-30
A
tbd
A
37
30
A
1.25
10
W
mW/°C
P
D
1.8
14
W
mW/°C
P
D
2.1
17
W
mW/°C
Operating and Storage Temperature Range
T
j
, T
stg
-55 to +150
°C
ABSOLUTE MAXIMUM RATINGS
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| ZXMC3A18DN8TA | 功能描述:MOSFET 30V COMPLEMENTARY ENHANCEMENT MODE RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
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| ZXMC3AM832(1) | 制造商:未知廠家 制造商全稱:未知廠家 功能描述: |
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