參數(shù)資料
型號(hào)： ZXMC3A17DN8TA
廠商： ZETEX PLC
元件分類： 小信號(hào)晶體管
英文描述： COMPLEMENTARY 30V ENHANCEMENT MODE MOSFET
中文描述： 5400 mA, 30 V, 2 CHANNEL, N AND P-CHANNEL, Si, SMALL SIGNAL, MOSFET
封裝： SOIC-8
文件頁(yè)數(shù)： 5/10頁(yè)
文件大?。?/td> 276K
代理商： ZXMC3A17DN8TA
ZXMC3A17DN8
S E M IC O N D U C T O R S
PROVISIONAL ISSUE C - AUGUST 2004
ADVANCE INFORMATION
5
PARAMETER
SYMBOL
MIN.
TYP.
MAX .
UNIT
CONDITIONS
STATIC
Drain-Source Breakdown
Voltage
V
(BR)DS S
-30
V
I
D
= -250 A, V
GS
=0V
Zero Gate Voltage Drain
Current
I
DS S
-1.0
A
V
DS
= -30V, V
GS
=0V
Gate-Body Leakage
I
GS S
100
nA
V
GS
=±20V, V
DS
=0V
Gate-Source Threshold
Voltage
V
GS (th)
-1.0
V
I
D
= -250 A, V
DS
=V
GS
Static Drain-Source
On-State Resistance
(1)
R
DS (on)
0.070
0.110
V
GS
= -10V, I
D
= -3.2A
V
GS
= -4.5V, I
D
= -2.5A
Forward
Transconductance
(1) (3)
g
fs
6.4
S
V
DS
= -15V, I
D
= -3.2A
DYNAMIC
(3)
Input Capacitance
C
iss
630
pF
V
DS
= -15V, V
GS
=0V
f=1MHz
Output Capacitance
C
oss
113
pF
Reverse Transfer
Capacitance
C
rss
78
pF
SWITCHING
(2) (3)
Turn-On-Delay Time
t
d(on)
1.7
ns
V
DD
= -15V, I
D
= -1A
R
G
6.0 ,
V
GS
= -10V
Rise Time
t
r
2.9
ns
Turn-Off Delay Time
t
d(off)
29.2
ns
Fall Time
t
f
8.7
ns
Gate Charge
Q
g
8.3
nC
V
DS
= -15V, V
GS
= -5V
I
D
= -3.2A
Total Gate Charge
Q
g
15.8
nC
V
DS
= -15V, V
GS
= -10V
I
D
= -3.2A
Gate-Source Charge
Q
gs
1.8
nC
Gate Drain Charge
Q
gd
2.8
nC
SOURCE-DRAIN DIODE
Diode Forward Voltage
(1)
V
S D
-0.85
-0.95
V
T
j
=25°C, I
S
= -2.5A,
V
GS
=0V
Reverse Recovery Time
(3)
Reverse Recovery Charge
(3)
t
rr
19.5
ns
T
j
=25°C, I
S
= -1.7A,
di/dt=100A/ s
Q
rr
16.3
nC
P-CHANNEL
ELECTRICAL CHARACTERISTICS
(at T
amb
= 25°C unless otherwise stated)
NOTES:
(1)
(2)
(3)
Measured under pulsed conditions. Pulse width
Switching characteristics are independent of operating junction temperature.
For design aid only, not subject to production testing.
300ms; Duty cycle
2%.
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ZXMC3A18DN8TC 制造商:ZETEX 制造商全稱:ZETEX 功能描述:COMPLEMENTARY 30V ENHANCEMENT MODE MOSFET
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