參數(shù)資料
型號： ZXMC3A17DN8TA
廠商： ZETEX PLC
元件分類： 小信號晶體管
英文描述： COMPLEMENTARY 30V ENHANCEMENT MODE MOSFET
中文描述： 5400 mA, 30 V, 2 CHANNEL, N AND P-CHANNEL, Si, SMALL SIGNAL, MOSFET
封裝： SOIC-8
文件頁數(shù)： 2/10頁
文件大?。?/td> 276K
代理商： ZXMC3A17DN8TA
ZXMC3A17DN8
S E M IC O N D U C T O R S
PROVISIONAL ISSUE C - AUGUST 2004
2
ADVANCE INFORMATION
PARAMETER
SYMBOL
V ALUE
UNIT
J unction to Ambient
(a) (d)
R
J A
100
°C/W
J unction to Ambient
(a) (e)
R
J A
70
°C/W
J unction to Ambient
(b) (d)
R
J A
60
°C/W
NOTES:
(a) For a dual device surface mounted on 25mm x 25mm FR4 PCB with high coverage of single sided 1oz copper, in still air conditions.
(b) For a dual device surface mounted on FR4 PCB measured at t
(c) Repetitive rating 25mm x 25mm FR4 PCB, D = 0.02, pulse width = 300 s - pulse width limited by maximum junction temperature.
(d)For a dual device with one active die.
(e) For dual device with two active die running at equal power.
10 sec.
THERMAL RESISTANCE
PARAMETER
SYMBOL
N-channel
P-channel
UNIT
Drain-Source Voltage
V
DS S
30
-30
V
Gate-Source Voltage
V
GS
±20
±20
V
Continuous Drain Current
(V
GS
= 10V; T
A
=25°C)
(b)(d)
(V
GS
= 10V; T
A
=70°C)
(b)(d)
(V
GS
= 10V; T
A
=25°C)
(a)(d)
I
D
5.4
4.3
4.1
-4.4
-3.6
-3.4
A
Pulsed Drain Current
(c)
Continuous Source Current (Body Diode)
(b)
Pulsed Source Current (Body Diode)
(c)
Power Dissipation at T
A
=25°C
(a) (d)
Linear Derating Factor
Power Dissipation at T
A
=25°C
(a) (e)
Linear Derating Factor
Power Dissipation at T
A
=25°C
(b) (d)
Linear Derating Factor
I
DM
23
-20
A
I
S
2.6
-2.5
A
I
S M
23
-20
A
P
D
1.25
10
W
mW/°C
P
D
1.8
14
W
mW/°C
P
D
2.1
17
W
mW/°C
Operating and Storage Temperature Range
T
j
, T
stg
-55 to +150
°C
ABSOLUTE MAXIMUM RATINGS
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
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ZXMC3A18DN8 制造商:ZETEX 制造商全稱:ZETEX 功能描述:COMPLEMENTARY 30V ENHANCEMENT MODE MOSFET
ZXMC3A18DN8_05 制造商:ZETEX 制造商全稱:ZETEX 功能描述:COMPLEMENTARY 30V ENHANCEMENT MODE MOSFET
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ZXMC3A18DN8TC 制造商:ZETEX 制造商全稱:ZETEX 功能描述:COMPLEMENTARY 30V ENHANCEMENT MODE MOSFET
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