參數(shù)資料
型號： ZXM66P02N8TA
廠商： ZETEX PLC
元件分類： 小信號晶體管
英文描述： 20V P-CHANNEL ENHANCEMENT MODE MOSFET
中文描述： 6400 mA, 20 V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET
封裝： SOIC-8
文件頁數(shù)： 3/4頁
文件大小： 49K
代理商： ZXM66P02N8TA
PROVISIONAL ISSUE A - MAY 2001
ZXM66P02N8
3
ELECTRICAL CHARACTERISTICS (at T
amb
= 25°C unless otherwise stated).
PARAMETER
SYMBOL MIN.
TYP.
MAX .
UNI
T
CONDITIONS.
STATIC
Drain-Source Breakdown Voltage
V
(BR)DS S
-20
V
I
D
=-250
μ
A, V
GS
=0V
Zero Gate Voltage Drain Current
I
DS S
-1
μ
A
V
DS
=-16V, V
GS
=0V
Gate-Body Leakage
I
GS S
-100
nA
V
GS
=
±
12V, V
DS
=0V
Gate-Source Threshold Voltage
V
GS (th)
-0.7
V
I
D
=-250
μ
A, V
DS
= V
GS
Static Drain-Source On-State Resistance
(1)
R
DS (on)
0.025
0.045
V
GS
=-4.5V, I
D
=-3.2A
V
GS
=-2.5V, I
D
=-2.7A
Forward Transconductance (1)(3)
g
fs
13.3
S
V
DS
=-10V,I
D
=-3.2A
DYNAMIC (3)
Input Capacitance
C
iss
2068
pF
V
=-15 V, V
GS
=0V,
f=1MHz
Output Capacitance
C
oss
1038
pF
Reverse Transfer Capacitance
C
rss
506
pF
SWITCHING(2) (3)
Turn-On Delay Time
t
d(on)
14.0
ns
V
DD
=-10V, I
D
=-3.2A
R
G
=6.0
, V
GS
=-5V
Rise Time
t
r
44.3
ns
Turn-Off Delay Time
t
d(off)
118.4
ns
Fall Time
t
f
98.4
ns
Total Gate Charge
Q
g
43.3
-
nC
V
DS
=-10V,V
GS
=-4.5V
I
D
=-3.2A
Gate-Source Charge
Q
gs
3.5
-
nC
Gate Drain Charge
Q
gd
21.3
-
nC
SOURCE-DRAIN DIODE
Diode Forward Voltage (1)
V
S D
0.95
V
T
j
=25°C, I
S
=-3.2A,
V
GS
=0V
Reverse Recovery Time (3)
t
rr
23.1
ns
T
=25°C, I
=-3.2A,
di/dt= 100A/
μ
s
Reverse Recovery Charge(3)
Q
rr
12.2
nC
(1) Measured under pulsed conditions. Width=300
μ
s. Duty cycle
≤
2% .
(2) Switching characteristics are independent of operating junction temperature.
(3) For design aid only, not subject to production testing.
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
ZXM66P02N8TC 功能描述:MOSFET 20V P-Chnl HDMOS RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
ZXM66P03N8 制造商:ZETEX 制造商全稱:ZETEX 功能描述:30V P-CHANNEL ENHANCEMENT MODE MOSFET
ZXM66P03N8(1) 制造商:ZETEX 制造商全稱:ZETEX 功能描述:
ZXM66P03N8TA 功能描述:MOSFET 30V P-Chnl HDMOS RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
ZXM66P03N8TC 功能描述:MOSFET 30V P Chnl HDMOS RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
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