參數(shù)資料
型號： ZXM66P02N8TA
廠商： ZETEX PLC
元件分類： 小信號晶體管
英文描述： 20V P-CHANNEL ENHANCEMENT MODE MOSFET
中文描述： 6400 mA, 20 V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET
封裝： SOIC-8
文件頁數(shù)： 2/4頁
文件大?。?/td> 49K
代理商： ZXM66P02N8TA
PROVISIONAL ISSUE A - MAY 2001
ZXM66P02N8
2
THERMAL RESISTANCE
PARAMETER
SYMBOL
VALUE
UNIT
J unction to Ambient (a)
R
θ
J A
80
°C/W
J unction to Ambient (b)
R
θ
J A
50
°C/W
NOTES
(a) For a device surface mounted on 25mm x 25mm FR4 PCB with high coverage of single sided 1oz copper,
in still air conditions
(b) For a device surface mounted on FR4 PCB measured at t 10 secs.
(c) Repetitive rating 25mm x 25mm FR4 PCB, D = 0.05, pulse width 10 s - pulse width limited by maximum
junction temperature.
ABSOLUTE MAXIMUM RATINGS.
PARAMETER
SYMBOL
LIMIT
UNIT
Drain-Source Voltage
V
DS S
V
GS
I
D
-20
±
12
-8.0
-6.5
-6.4
V
Gate- Source Voltage
V
Continuous Drain Current V
GS
=-4.5V; T
A
=25°C (b)
V
GS
=-4.5V; T
A
=70°C (b)
V
GS
=-4.5V; T
A
=25°C (a)
A
Pulsed Drain Current (c)
I
DM
I
S
I
S M
P
D
-28
A
Continuous Source Current (Body Diode)(b)
-4.15
A
Pulsed Source Current (Body Diode)(c)
-28
A
Power Dissipation at T
A
=25°C (a)
Linear Derating Factor
1.56
12.5
W
mW/°C
Power Dissipation at T
A
=25°C (b)
Linear Derating Factor
P
D
2.5
20
W
mW/°C
Operating and Storage Temperature Range
T
j
:T
stg
-55 to +150
°C
相關(guān)PDF資料
PDF描述
ZXM66P02N8TC 20V P-CHANNEL ENHANCEMENT MODE MOSFET
ZXM66P03N8(1)
ZXM66P03N8TA 30V P-CHANNEL ENHANCEMENT MODE MOSFET
ZXM66P03N8TC 30V P-CHANNEL ENHANCEMENT MODE MOSFET
ZXM66P03N8 30V P-CHANNEL ENHANCEMENT MODE MOSFET
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
ZXM66P02N8TC 功能描述:MOSFET 20V P-Chnl HDMOS RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
ZXM66P03N8 制造商:ZETEX 制造商全稱:ZETEX 功能描述:30V P-CHANNEL ENHANCEMENT MODE MOSFET
ZXM66P03N8(1) 制造商:ZETEX 制造商全稱:ZETEX 功能描述:
ZXM66P03N8TA 功能描述:MOSFET 30V P-Chnl HDMOS RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
ZXM66P03N8TC 功能描述:MOSFET 30V P Chnl HDMOS RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
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