參數(shù)資料
型號: ZXM64N02X
廠商: ZETEX PLC
元件分類: 小信號晶體管
英文描述: 20V N-CHANNEL ENHANCEMENT MODE MOSFET
中文描述: 3900 mA, 20 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET
封裝: MSOP-8
文件頁數(shù): 6/7頁
文件大?。?/td> 180K
代理商: ZXM64N02X
Basic Gate Charge Waveform
Gate Charge Test Circuit
Switching Time Waveforms
Switching Time Test Circuit
0.1
100
0
8
16
V
DS
- Drain Source Voltage (V)
Capacitance v Drain-Source Voltage
0
1000
2000
C
V
G
-
6.0
3.0
0
Q -Charge (nC)
Gate-Source Voltage v Gate Charge
Ciss
Coss
Crss
Vgs=0V
f=1Mhz
2
4
6
10
12
14
1.0
2.0
4.0
5.0
250
500
750
1250
1500
1750
VDS=16V
I
D
=3.8A
1
10
TYPICAL CHARACTERISTICS
ZXM64N02X
126
PROVISIONAL ISSUE A - JULY 1999
相關PDF資料
PDF描述
ZXM64N02XTA 20V N-CHANNEL ENHANCEMENT MODE MOSFET
ZXM64N02XTC 16 BIT HYBRID CONTROLLER
ZXM64N035G 16 BIT HYBRID CONTROLLER
ZXM64N035GTA 35V N-CHANNEL ENHANCEMENT MODE MOSFET
ZXM64N035GTC 35V N-CHANNEL ENHANCEMENT MODE MOSFET
相關代理商/技術參數(shù)
參數(shù)描述
ZXM64N02X 制造商:Diodes Incorporated 功能描述:MOSFET N MSOP-8
ZXM64N02X_04 制造商:ZETEX 制造商全稱:ZETEX 功能描述:20V N-CHANNEL ENHANCEMENT MODE MOSFET
ZXM64N02XTA 功能描述:MOSFET 20V P-Chnl HDMOS RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS(導通):0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
ZXM64N02XTC 功能描述:MOSFET 20V P-Chnl HDMOS RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS(導通):0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
ZXM64N035G 制造商:ZETEX 制造商全稱:ZETEX 功能描述:35V N-CHANNEL ENHANCEMENT MODE MOSFET