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參數(shù)資料
| 型號： | ZXM64N02X |
| 廠商： | ZETEX PLC |
| 元件分類： | 小信號晶體管 |
| 英文描述： | 20V N-CHANNEL ENHANCEMENT MODE MOSFET |
| 中文描述： | 3900 mA, 20 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET |
| 封裝： | MSOP-8 |
| 文件頁數(shù)： | 4/7頁 |
| 文件大?。?/td> | 180K |
| 代理商： | ZXM64N02X |
ELECTRICAL CHARACTERISTICS (at T
amb
= 25°C unless otherwise stated).
PARAMETER
SYMBOL MIN.
TYP.
MAX.
UNIT CONDITIONS.
STATIC
Drain-Source Breakdown Voltage
V
(BR)DSS
20
V
I
D
=250
μ
A, V
GS
=0V
Zero Gate Voltage Drain Current
I
DSS
1
μ
A
V
DS
=20V, V
GS
=0V
Gate-Body Leakage
I
GSS
100
nA
V
GS
=
±
12V, V
DS
=0V
Gate-Source Threshold Voltage
V
GS(th)
0.7
V
I
D
=250
μ
A, V
DS
= V
GS
Static Drain-Source On-State Resistance
(1)
R
DS(on)
0.040
0.050
V
GS
=4.5V, I
D
=3.8A
V
GS
=2.7V, I
D
=1.9A
Forward Transconductance (3)
g
fs
6.1
S
V
DS
=10V,I
D
=1.9A
DYNAMIC (3)
Input Capacitance
C
iss
1100
pF
V
=15 V, V
GS
=0V,
f=1MHz
Output Capacitance
C
oss
350
pF
Reverse Transfer Capacitance
C
rss
100
pF
SWITCHING(2) (3)
Turn-On Delay Time
t
d(on)
5.7
ns
V
DD
=10V, I
D
=3.8A
R
=6.2
, R
=2.6
(Refer to test
circuit)
Rise Time
t
r
9.6
ns
Turn-Off Delay Time
t
d(off)
28.3
ns
Fall Time
t
f
11.6
ns
Total Gate Charge
Q
g
16
nC
V
DS
=16V,V
GS
=4.5V,
I
=3.8A
(Refer to test
circuit)
Gate-Source Charge
Q
gs
3.5
nC
Gate Drain Charge
Q
gd
5.4
nC
SOURCE-DRAIN DIODE
Diode Forward Voltage (1)
V
SD
0.95
V
T
j
=25°C, I
S
=3.8A,
V
GS
=0V
Reverse Recovery Time (3)
t
rr
23.7
ns
T
=25°C, I
=3.8A,
di/dt= 100A/
μ
s
Reverse Recovery Charge(3)
Q
rr
13.3
nC
(1) Measured under pulsed conditions. Width=300
μ
s. Duty cycle
≤
2% .
(2) Switching characteristics are independent of operating junction temperature.
(3) For design aid only, not subject to production testing.
124
ZXM64N02X
PROVISIONAL ISSUE A - JULY 1999
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相關代理商/技術參數(shù) |
參數(shù)描述 |
|---|---|
| ZXM64N02X | 制造商:Diodes Incorporated 功能描述:MOSFET N MSOP-8 |
| ZXM64N02X_04 | 制造商:ZETEX 制造商全稱:ZETEX 功能描述:20V N-CHANNEL ENHANCEMENT MODE MOSFET |
| ZXM64N02XTA | 功能描述:MOSFET 20V P-Chnl HDMOS RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| ZXM64N02XTC | 功能描述:MOSFET 20V P-Chnl HDMOS RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| ZXM64N035G | 制造商:ZETEX 制造商全稱:ZETEX 功能描述:35V N-CHANNEL ENHANCEMENT MODE MOSFET |
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