參數(shù)資料
型號(hào): ZXM62P03E6TA
廠商: ZETEX PLC
元件分類: 小信號(hào)晶體管
英文描述: 30V P-CHANNEL ENHANCEMENT MODE MOSFET
中文描述: 1500 mA, 20 V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET
封裝: SOT-23, 6 PIN
文件頁(yè)數(shù): 6/7頁(yè)
文件大?。?/td> 205K
代理商: ZXM62P03E6TA
TYPICAL CHARACTERISTICS
Basic Gate Charge Waveform
Gate Charge Test Circuit
Switching Time Waveforms
Switching Time Test Circuit
0.1
10
100
0
4
10
-V
DS
- Drain Source Voltage (V)
Capacitance v Drain-Source Voltage
0
500
C
ID=-1.6A
-
G
10
9
8
0
Q -Charge (nC)
Gate-Source Voltage v Gate Charge
VDS=-24V
Ciss
Coss
Crss
Vgs=0V
f=1Mhz
600
200
400
100
300
1
7
6
VDS=-15V
7
6
5
4
3
2
1
1
2
3
5
8
9
ZXM62P03E6
118
PROVISIONAL ISSUE A - JULY 1999
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
ZXM62P03E6TC 功能描述:MOSFET 30V P Chnl HDMOS RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS(導(dǎo)通):0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
ZXM62P03G 制造商:ZETEX 制造商全稱:ZETEX 功能描述:30V P-CHANNEL ENHANCEMENT MODE MOSFET
ZXM62P03GTA 功能描述:MOSFET 30V P-Chnl HDMOS RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS(導(dǎo)通):0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
ZXM62P03GTC 制造商:ZETEX 制造商全稱:ZETEX 功能描述:30V P-CHANNEL ENHANCEMENT MODE MOSFET
ZXM63C02 制造商:DIODES 制造商全稱:Diodes Incorporated 功能描述:20V Dual N and P-Channel Enhancement Mode Mosfet