參數(shù)資料
型號： ZXM62P03E6TA
廠商： ZETEX PLC
元件分類： 小信號晶體管
英文描述： 30V P-CHANNEL ENHANCEMENT MODE MOSFET
中文描述： 1500 mA, 20 V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET
封裝： SOT-23, 6 PIN
文件頁數(shù)： 2/7頁
文件大?。?/td> 205K
代理商： ZXM62P03E6TA
ZXM62P03E6
THERMAL RESISTANCE
PARAMETER
SYMBOL
VALUE
UNIT
Junction to Ambient (a)
R
θ
JA
113
°C/W
Junction to Ambient (b)
R
θ
JA
73
°C/W
NOTES
(a) For a device surface mounted on 25mm x 25mm FR4 PCB with high coverage of single sided 1oz copper,
in still air conditions
(b) For a device surface mounted on FR4 PCB measured at t
<
5 secs.
(c) Repetitive rating - pulse width limited by maximum junction temperature. Refer to Transient Thermal
Impedance graph.
114
ABSOLUTE MAXIMUM RATINGS.
PARAMETER
SYMBOL
LIMIT
UNIT
Drain-Source Voltage
V
DSS
V
GS
I
D
-30
±
20
V
Gate- Source Voltage
V
Continuous Drain Current (V
GS
=-10V; T
A
=25°C)(b)
(V
GS
=-10V; T
A
=70°C)(b)
Pulsed Drain Current (c)
-2.6
-2.0
A
I
DM
I
S
I
SM
P
D
-13
A
Continuous Source Current (Body Diode)(b)
-1.9
A
Pulsed Source Current (Body Diode)(c)
-13
A
Power Dissipation at T
A
=25°C (a)
Linear Derating Factor
1.1
8.8
W
mW/°C
Power Dissipation at T
A
=25°C (b)
Linear Derating Factor
P
D
1.7
13.6
W
mW/°C
Operating and Storage Temperature Range
T
j
:T
stg
-55 to +150
°C
PROVISIONAL ISSUE A - JULY 1999
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
ZXM62P03E6TC 功能描述:MOSFET 30V P Chnl HDMOS RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
ZXM62P03G 制造商:ZETEX 制造商全稱:ZETEX 功能描述:30V P-CHANNEL ENHANCEMENT MODE MOSFET
ZXM62P03GTA 功能描述:MOSFET 30V P-Chnl HDMOS RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
ZXM62P03GTC 制造商:ZETEX 制造商全稱:ZETEX 功能描述:30V P-CHANNEL ENHANCEMENT MODE MOSFET
ZXM63C02 制造商:DIODES 制造商全稱:Diodes Incorporated 功能描述:20V Dual N and P-Channel Enhancement Mode Mosfet
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