參數(shù)資料
型號： ZX5T851G
廠商： Zetex Semiconductor
元件分類： 圓形連接器
英文描述： Circular Connector; MIL SPEC:MIL-C-26482, Series I; Body Material:Aluminum Alloy; Series:MS3126; No. of Contacts:16; Connector Shell Size:20; Connecting Termination:Crimp; Circular Shell Style:Straight Plug RoHS Compliant: No
中文描述： 60V的npn型中功率低飽和晶體管采用SOT223
文件頁數(shù)： 4/6頁
文件大小： 122K
代理商： ZX5T851G
ZX5T851G
S E M IC O N D U C T O R S
ISSUE 2 - SEPTEMBER 2003
4
PARAMETER
SYMBOL
MIN.
TYP.
MAX.
UNIT CONDITIONS
Collector-base breakdown voltage
BV
CBO
BV
CER
BV
CEO
BV
EBO
I
CBO
150
190
V
I
C
=100 A
I
C
=1 A, RB
I
C
=10mA*
I
E
=100 A
V
CB
=120V
V
CB
=120V,T
amb
=100 C
V
CB
=120V
V
CB
=120V,T
amb
=100 C
V
EB
=6V
I
C
=100mA, I
B
=5mA*
I
C
=1A, I
B
=100mA*
I
C
=1A, I
B
=50mA*
I
C
=2A, I
B
=50mA*
I
C
=6A, I
B
=300mA*
I
C
=6A, I
B
=300mA*
I
C
=6A, V
CE
=1V*
I
C
=10mA, V
CE
=1V*
I
C
=2A, V
CE
=1V*
I
C
=5A, V
CE
=1V*
I
C
=10A, V
CE
=1V*
MHz I
C
=100mA, V
CE
=10V
f=50MHz
Collector-emitter breakdown voltage
150
190
V
1k
Collector-emitter breakdown voltage
60
80
V
Emitter-base breakdown voltage
7
8.1
V
Collector cut-off current
20
0.5
nA
A
Collector cut-off current
I
CER
R
1k
20
0.5
nA
A
Emitter cut-off current
I
EBO
V
CE(S AT)
10
nA
Collector-emitter saturation voltage
20
45
50
100
210
30
60
70
135
260
mV
mV
mV
mV
mV
Base-emitter saturation voltage
V
BE(S AT)
V
BE(ON)
H
FE
1000
1100
mV
Base-emitter turn-on voltage
940
1050
mV
Static forward current transfer ratio
100
100
55
20
200
200
105
40
300
Transition frequency
f
T
130
Output capacitance
C
OBO
t
ON
t
OFF
31
pF
V
CB
=10A, f=1MHz*
I
C
=1A, V
CC
=10V,
I
B1
=I
B2
=100mA
Switching times
42
760
ns
ELECTRICAL CHARACTERISTICS
(at T
amb
= 25°C unless otherwise stated)
NOTES
(1) Measured under pulsed conditions. Pulse width
300 s; duty cycle
2%.
相關(guān)PDF資料
PDF描述
ZX5T851GTA 60V NPN MEDIUM POWER LOW SATURATION TRANSISTOR IN SOT223
ZX5T851GTC Circular Connector; MIL SPEC:MIL-C-26482, Series I; Body Material:Aluminum Alloy; Series:MS3126; Number of Contacts:39; Connector Shell Size:20; Connecting Termination:Crimp; Circular Shell Style:Straight Plug
ZX5T853G Circular Connector; No. of Contacts:39; Series:; Body Material:Aluminum; Connector Shell Size:20; Circular Contact Gender:Pin; Circular Shell Style:Straight Plug; Insert Arrangement:20-39; MIL SPEC:MIL-C-26482 Series I RoHS Compliant: No
ZX5T853GTA 100V NPN LOW SAT MEDIUM POWER LOW SATURATION TRANSISTOR IN SOT223
ZX5T853GTC 100V NPN LOW SAT MEDIUM POWER LOW SATURATION TRANSISTOR IN SOT223
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
ZX5T851GTA 功能描述:兩極晶體管 - BJT NPN 60V RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2
ZX5T851GTC 制造商:DIODES 制造商全稱:Diodes Incorporated 功能描述:60V NPN MEDIUM POWER LOW SATURATION TRANSISTOR IN SOT223
ZX5T851Z 制造商:ZETEX 制造商全稱:ZETEX 功能描述:60V NPN LOW SATURATION MEDIUM POWER TRANSISTOR IN SOT89
ZX5T851ZTA 功能描述:TRANSISTOR NPN 60V 5A SOT89 RoHS:是 類別:分離式半導(dǎo)體產(chǎn)品 >> 晶體管(BJT) - 單路 系列:- 標(biāo)準(zhǔn)包裝:1 系列:- 晶體管類型:NPN 電流 - 集電極 (Ic)（最大）:1A 電壓 - 集電極發(fā)射極擊穿（最大）:30V Ib、Ic條件下的Vce飽和度（最大）:200mV @ 100mA，1A 電流 - 集電極截止（最大）:100nA 在某 Ic、Vce 時(shí)的最小直流電流增益 (hFE):300 @ 500mA，5V 功率 - 最大:710mW 頻率 - 轉(zhuǎn)換:100MHz 安裝類型:表面貼裝 封裝/外殼:TO-236-3，SC-59，SOT-23-3 供應(yīng)商設(shè)備封裝:SOT-23-3（TO-236） 包裝:Digi-Reel® 其它名稱:MMBT489LT1GOSDKR
ZX5T853G 制造商:ZETEX 制造商全稱:ZETEX 功能描述:100V NPN LOW SAT MEDIUM POWER LOW SATURATION TRANSISTOR IN SOT223
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