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參數(shù)資料
| 型號： | ZX5T851G |
| 廠商： | Zetex Semiconductor |
| 元件分類： | 圓形連接器 |
| 英文描述： | Circular Connector; MIL SPEC:MIL-C-26482, Series I; Body Material:Aluminum Alloy; Series:MS3126; No. of Contacts:16; Connector Shell Size:20; Connecting Termination:Crimp; Circular Shell Style:Straight Plug RoHS Compliant: No |
| 中文描述： | 60V的npn型中功率低飽和晶體管采用SOT223 |
| 文件頁數(shù)： | 2/6頁 |
| 文件大?。?/td> | 122K |
| 代理商： | ZX5T851G |
ZX5T851G
S E M IC O N D U C T O R S
ISSUE 2 - SEPTEMBER 2003
2
PARAMETER
SYMBOL
VALUE
UNIT
J unction to ambient
(a)
R
J A
42
°C/W
NOTES
(a) For a device surface mounted on 52mm x 52mm x 1.6mm FR4 PCB with high coverage of single sided 2oz copper, in still air conditions.
(b) For a device surface mounted on 25mm x 25mm x 1.6mm FR4 PCB with high coverage of single sided 1oz copper, in still air conditions.
THERMAL RESISTANCE
PARAMETER
SYMBOL
LIMIT
UNIT
Collector-base voltage
BV
CBO
BV
CEO
BV
EBO
I
C
I
CM
P
D
150
V
Collector-emitter voltage
60
V
Emitter-base voltage
Continuous collector current
(a)
7
V
6
A
Peak pulse current
Power dissipation at T
A
=25°C
(a)
Linear derating factor
Power dissipation at T
A
=25°C
(b)
Linear derating factor
20
A
3.0
24
W
mW/°C
P
D
1.6
12.8
W
mW/°C
Operating and storage temperature range
T
j
, T
stg
-55 to +150
°C
ABSOLUTE MAXIMUM RATINGS
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| ZX5T851GTA | 60V NPN MEDIUM POWER LOW SATURATION TRANSISTOR IN SOT223 |
| ZX5T851GTC | Circular Connector; MIL SPEC:MIL-C-26482, Series I; Body Material:Aluminum Alloy; Series:MS3126; Number of Contacts:39; Connector Shell Size:20; Connecting Termination:Crimp; Circular Shell Style:Straight Plug |
| ZX5T853G | Circular Connector; No. of Contacts:39; Series:; Body Material:Aluminum; Connector Shell Size:20; Circular Contact Gender:Pin; Circular Shell Style:Straight Plug; Insert Arrangement:20-39; MIL SPEC:MIL-C-26482 Series I RoHS Compliant: No |
| ZX5T853GTA | 100V NPN LOW SAT MEDIUM POWER LOW SATURATION TRANSISTOR IN SOT223 |
| ZX5T853GTC | 100V NPN LOW SAT MEDIUM POWER LOW SATURATION TRANSISTOR IN SOT223 |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| ZX5T851GTA | 功能描述:兩極晶體管 - BJT NPN 60V RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
| ZX5T851GTC | 制造商:DIODES 制造商全稱:Diodes Incorporated 功能描述:60V NPN MEDIUM POWER LOW SATURATION TRANSISTOR IN SOT223 |
| ZX5T851Z | 制造商:ZETEX 制造商全稱:ZETEX 功能描述:60V NPN LOW SATURATION MEDIUM POWER TRANSISTOR IN SOT89 |
| ZX5T851ZTA | 功能描述:TRANSISTOR NPN 60V 5A SOT89 RoHS:是 類別:分離式半導體產(chǎn)品 >> 晶體管(BJT) - 單路 系列:- 標準包裝:1 系列:- 晶體管類型:NPN 電流 - 集電極 (Ic)（最大）:1A 電壓 - 集電極發(fā)射極擊穿（最大）:30V Ib、Ic條件下的Vce飽和度（最大）:200mV @ 100mA，1A 電流 - 集電極截止（最大）:100nA 在某 Ic、Vce 時的最小直流電流增益 (hFE):300 @ 500mA，5V 功率 - 最大:710mW 頻率 - 轉(zhuǎn)換:100MHz 安裝類型:表面貼裝 封裝/外殼:TO-236-3，SC-59，SOT-23-3 供應商設(shè)備封裝:SOT-23-3（TO-236） 包裝:Digi-Reel® 其它名稱:MMBT489LT1GOSDKR |
| ZX5T853G | 制造商:ZETEX 制造商全稱:ZETEX 功能描述:100V NPN LOW SAT MEDIUM POWER LOW SATURATION TRANSISTOR IN SOT223 |
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