參數(shù)資料
型號： ZVN2110G
廠商： ZETEX PLC
元件分類： JFETs
英文描述： Circular Connector; Body Material:Aluminum; Series:PT00; No. of Contacts:6; Connector Shell Size:10; Connecting Termination:Solder; Circular Shell Style:Wall Mount Receptacle; Circular Contact Gender:Socket; Insert Arrangement:10-98
中文描述： 0.5 A, 100 V, 4 ohm, N-CHANNEL, Si, POWER, MOSFET
封裝： SOT-223, 4 PIN
文件頁數(shù)： 1/3頁
文件大?。?/td> 43K
代理商： ZVN2110G
SOT223 N-CHANNEL ENHANCEMENT
MODE VERTICAL DMOS FET
ISSUE 3 – OCTOBER 1995
FEATURES
*
6A PULSE DRAIN CURRENT
*
FAST SWITCHING SPEED
%
PARTMARKING DETAIL -
COMPLEMENTARY TYPE -
ABSOLUTE MAXIMUM RATINGS.
ZVN2110
ZVP2110G
PARAMETER
SYMBOL
VALUE
UNIT
Drain-Source Voltage
V
DS
I
D
I
DM
V
GS
P
tot
T
j
:T
stg
100
V
Continuous Drain Current at T
amb
=25°C
Pulsed Drain Current
500
mA
6
A
Gate S ource Voltage
±
20
2
V
Power Dissipation at T
amb
=25°C
Operating and Storage Temperature Range
ELECTRICAL CHARACTERISTICS (at T
amb
= 25°C unless otherwise stated).
PARAMETER
SYMBOL
MIN. TYP. MAX. UNIT
W
-55 to +150
°C
CONDITIONS.
Drain-Source Breakdown Voltage
BV
DSS
V
GS(th)
I
GSS
100
V
I
D
=1mA, V
GS
=0V
I
D
=1mA, V
DS
= V
GS
V
GS
=
±
20V, V
DS
=0V
V
DS
=100V, V
GS
=0
V
DS
=80V, V
GS
=0V, T=125°C(2)
Gate-Source Threshold Voltage
0.8
2.4
V
Gate-Body Leakage
0.1
20
nA
Zero Gate Voltage Drain Current
I
DSS
1
100
μ
A
μ
A
On-State Drain Current(1)
I
D(on)
R
DS(on)
1.5
2
A
V
DS
=25V, V
GS
=10V
V
GS
=10V, I
D
=1A
Static Drain-Source On-State
Resistance (1)
4
Forward Transconductance (1)(2)
g
fs
C
iss
C
oss
250
350
mS
V
DS
=25V, I
D
=1A
Input Capacitance (2)
59
75
pF
Common Source Output
Capacitance (2)
16
25
pF
V
DS
=25 V, V
GS
=0V, f=1MHz
Reverse Transfer Capacitance (2)
C
rss
t
d(on)
t
r
t
d(off)
t
f
4
8
pF
Turn-On Delay Time (2)(3)
4
7
ns
V
DD
≈
25V, I
D
=1A
Rise Time (2)(3)
4
8
ns
Turn-Off Delay Time (2)(3)
8
13
ns
Fall Time (2)(3)
DRAIN-SOURCE DIODE CHARACTERISTICS
8
13
ns
PARAMETER
SYMBOL
MIN. TYP. MAX. UNIT
CONDITIONS.
Diode Forward Voltage (1)
V
S D
T
RR
0.82
V
I
S
=0.32A, V
GS
=0
I
F
=0.32A, V
GS
=0, I
R
=0.1A
Reverse Recovery Time
112
ns
(1) Measured under pulsed conditions. Width=300
μ
s. Duty cycle
≤
2% (2) Sample test.
(3) Switching times measured with 50
source impedance and <5ns rise time on a pulse generator
ZVN2110G
D
D
S
G
3 - 387
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ZVN2120G Circular Connector; MIL SPEC:MIL-C-26482, Series I, Solder; Body Material:Aluminum; Series:PT00; Number of Contacts:10; Connector Shell Size:12; Connecting Termination:Solder; Circular Shell Style:Wall Mount Receptacle
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
ZVN2110G 制造商:Diodes Incorporated 功能描述:MOSFET N LOGIC SOT-223
ZVN2110G/TA 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR MOSFET SOT-223
ZVN2110GTA 功能描述:MOSFET N-Chnl 100V RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
ZVN2110GTA-CUT TAPE 制造商:DIODES 功能描述:ZVN2110G Series 100 V 4 Ohm N-Channel Enhancement Mode Vertical DMOS FET-SOT-223
ZVN2110GTC 功能描述:MOSFET N-Chnl 100V RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
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