參數(shù)資料
型號(hào): ZVN0124B
元件分類: TVS-瞬態(tài)抑制二極管
英文描述: Transient Voltage Suppressor Diodes
中文描述: 晶體管| MOSFET的| N溝道| 240伏五(巴西)直| 420MA(?。﹟ TO - 39封裝
文件頁(yè)數(shù): 1/1頁(yè)
文件大?。?/td> 47K
代理商: ZVN0124B
N-CHANNEL ENHANCEMENT
MODE VERTICAL DMOS FET
ISSUE 1 APRIL 94
FEATURES
*
170 Volt BV
DS
APPLICATIONS
*
Telephone handsets
ABSOLUTE MAXIMUM RATINGS.
PARAMETER
SYMBOL
VALUE
UNIT
Drain-Source Voltage
V
DS
I
D
I
DM
V
GS
170
V
Continuous Drain Current at T
amb
=25°C
Pulsed Drain Current
160
mA
2
A
Gate Source Voltage
±
20
V
Power Dissipation at T
amb
=25°C
Operating and Storage Temperature Range
P
tot
T
j
:T
stg
700
mW
-55 to +150
°C
ELECTRICAL CHARACTERISTICS (at T
amb
= 25°C unless otherwise stated).
PARAMETER
SYMBOL MIN.
MAX.
UNIT CONDITIONS.
I
D
=10
μ
A, V
GS
=0V
Drain-Source Breakdown
Voltage
BV
DSS
170
V
Gate-Body Leakage
I
GSS
100
nA
V
GS
=
±
15V, V
DS
=0V
V
DS
=170 V, V
GS
=0
V
=140 V, V
GS
=0V,
T=50°C
(2)
Zero Gate Voltage Drain
Current
I
DSS
10
50
μ
A
μ
A
On-State Drain Current(1)
I
D(on)
R
DS(on)
100
mA
V
DS
=3V, V
GS
=3.3V
V
GS
=3.3V,I
=100mA
V
GS
=3V,I
D
=30mA
Static Drain-Source
On-State Resistance (1)
23
23
(1) Measured under pulsed conditions. Width=300
μ
s. Duty cycle
2%
E-Line
TO92 Compatible
ZVN0117TA
PAGE NO
D
相關(guān)PDF資料
PDF描述
ZVN0124L Transient Voltage Suppressor Diodes
ZVN0120A N-CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET
ZVN0120 N CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET
ZVN0120A N CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET
ZVN0120B N CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
ZVN0124D 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | MOSFET | N-CHANNEL | 240V V(BR)DSS | CHIP
ZVN0124L 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | MOSFET | N-CHANNEL | 240V V(BR)DSS | 500MA I(D) | TO-220
ZVN0124Z 功能描述:MOSFET VMOS N Channel RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS(導(dǎo)通):0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
ZVN0124ZSTOA 功能描述:MOSFET VMOS N Channel RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS(導(dǎo)通):0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
ZVN0124ZSTOB 功能描述:MOSFET VMOS N Channel RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS(導(dǎo)通):0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube