參數(shù)資料
型號(hào)： ZVN0120A
廠(chǎng)商： Electronic Theatre Controls, Inc.
英文描述： N-CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET
中文描述： N溝道增強(qiáng)型場(chǎng)效應(yīng)管垂直的DMOS
文件頁(yè)數(shù)： 1/1頁(yè)
文件大?。?/td> 23K
代理商： ZVN0120A
N-CHANNEL ENHANCEMENT
MODE VERTICAL DMOS FET
ISSUE 2 – MARCH 94
FEATURES
*
200 Volt V
DS
*
R
DS(on)
=16
APPLICATIONS
*
Telephone handsets
REFER TO ZVN0124A FOR GRAPHS
ABSOLUTE MAXIMUM RATINGS.
PARAMETER
SYMBOL
VALUE
UNIT
Drain-Source Voltage
V
DS
I
D
I
DM
V
GS
P
tot
T
j
:T
stg
200
V
Continuous Drain Current at T
amb
=25°C
Pulsed Drain Current
160
mA
2
A
Gate Source Voltage
±
20
700
V
Power Dissipation at T
amb
=25°C
Operating and Storage Temperature Range
mW
-55 to +150
°C
ELECTRICAL CHARACTERISTICS (at T
amb
= 25°C unless otherwise stated).
PARAMETER
SYMBOL MIN.
MAX .
UNIT CONDITIONS .
Drain-Source Breakdown
Voltage
BV
DS S
200
V
I
D
=1mA, V
GS
=0V
Gate-Source Threshold
Voltage
V
GS (th)
1
3
V
ID=1mA, V
DS
= V
GS
Gate-Body Leakage
I
GS S
I
DS S
20
nA
V
GS
=
±
20V, V
DS
=0V
V
DS
=200 V, V
GS
=0
V
=160 V, V
GS
=0V,
T=125°C
(2)
Zero Gate Voltage Drain
Current
10
100
μ
A
μ
A
On-State Drain Current(1)
I
D(on)
R
DS (on)
500
mA
V
DS
=25 V, V
GS
=10V
V
GS
=10V,I
D
=250mA
S tatic Drain-Source On-State
Resistance (1)
16
Forward Transconductance
(1)(2)
g
fs
100
mS
V
DS
=25V,I
D
=250mA
Input Capacitance (2)
C
iss
C
oss
85
pF
Common Source Output
Capacitance (2)
20
pF
V
DS
=25 V, V
GS
=0V, f=1MHz
Reverse Transfer
Capacitance (2)
C
rss
7
pF
Turn-On Delay Time (2)(3)
t
d(on)
t
r
t
d(off)
t
f
7
ns
V
DD
≈
25V, I
D
=250mA
Rise Time (2)(3)
8
ns
Turn-Off Delay Time (2)(3)
16
ns
Fall Time (2)(3)
8
ns
(1) Measured under pulsed conditions. Width=300
μ
s. Duty cycle
≤
2%
(
2
)
Sample test.
E-Line
TO92 Compatible
ZVN0120A
3-349
D
相關(guān)PDF資料
PDF描述
ZVN0120 N CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET
ZVN0120A N CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET
ZVN0120B N CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET
ZVN0120L N CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET
ZVN0124A Circular Connector; Body Material:Aluminum; Series:PT00; Number of Contacts:5; Connector Shell Size:10; Connecting Termination:Solder; Circular Shell Style:Wall Mount Receptacle; Circular Contact Gender:Socket
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
ZVN0120ASTOA 功能描述:MOSFET - RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
ZVN0120ASTOB 功能描述:MOSFET - RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
ZVN0120ASTZ 功能描述:MOSFET - RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
ZVN0120B 制造商:ZETEX 制造商全稱(chēng):ZETEX 功能描述:N CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET
ZVN0120L 制造商:ZETEX 制造商全稱(chēng):ZETEX 功能描述:N CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET
發(fā)布緊急采購(gòu)，3分鐘左右您將得到回復(fù)。

采購(gòu)需求

(若只采購(gòu)一條型號(hào)，填寫(xiě)一行即可)

發(fā)布成功！您可以繼續(xù)發(fā)布采購(gòu)。也可以進(jìn)入我的后臺(tái)，查看報(bào)價(jià)

發(fā)布成功！您可以繼續(xù)發(fā)布采購(gòu)。也可以進(jìn)入我的后臺(tái)，查看報(bào)價(jià)

*型號(hào) *數(shù)量 廠(chǎng)商 批號(hào) 封裝
添加更多采購(gòu)

我的聯(lián)系方式

*
*
*