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參數(shù)資料
| 型號： | ZTX696B |
| 廠商： | ZETEX PLC |
| 元件分類： | 小信號晶體管 |
| 英文描述： | NPN SILICON PLANAR MEDIUM POWER HIGH GAIN TRANSISTOR |
| 中文描述： | 500 mA, 180 V, NPN, Si, SMALL SIGNAL TRANSISTOR |
| 封裝： | TO-92 COMPATIBLE, E-LINE PACKAGE-3 |
| 文件頁數(shù)： | 1/3頁 |
| 文件大?。?/td> | 55K |
| 代理商： | ZTX696B |
E-Line
TO92 Compatible
NPN SILICON PLANAR MEDIUM POWER
HIGH GAIN TRANSISTOR
ISSUE 3 - NOVEMBER 1995
FEATURES
*
180 Volt V
CEO
*
Gain of 500 at I
C
=100mA
*
Very low saturation voltage
APPLICATIONS
*
Darlington replacement
*
Battery powered circuits
*
Motor drivers
*
Relay / solenoid drivers
ABSOLUTE MAXIMUM RATINGS.
PARAMETER
SYMBOL
VALUE
UNIT
Collector-Base Voltage
V
CBO
180
V
Collector-Emitter Voltage
V
CEO
180
V
Emitter-Base Voltage
V
EBO
5
V
Peak Pulse Current
I
CM
1
A
Continuous Collector Current
I
C
0.5
A
Practical Power Dissipation *
P
totp
1.5
W
Power Dissipation at T
=25°C
derate above 25°C
P
tot
1
5.7
W
mW/°C
Operating and Storage Temperature Range
T
j
:T
stg
-55 to +200
°C
*The power which can be dissipated assuming the device is mounted in a typical manner on a
P.C.B. with copper equal to 1 inch square minimum
ELECTRICAL CHARACTERISTICS (at T
amb
= 25°C)
PARAMETER
SYMBOL
MIN.
TYP.
MAX.
UNIT
CONDITIONS.
Collector-Base Breakdown
Voltage
V
(BR)CBO
180
V
I
C
=100
μ
A
Collector-Emitter Breakdown
Voltage
V
(BR)CEO
180
V
I
C
=10mA*
Emitter-Base Breakdown
Voltage
V
(BR)EBO
5
V
I
E
=100
μ
A
Collector Cut-Off Current
I
CBO
0.1
μ
A
V
CB
=145V
Emitter Cut-Off Current
I
EBO
0.1
μ
A
V
EB
=4V
Collector-Emitter Saturation
Voltage
V
CE(sat)
0.2
0.2
0.25
V
V
V
I
C
=50mA, I
B
=0.5mA*
I
C
=100mA, I
B
=2mA*
I
C
=200mA, I
B
=5mA*
Base-Emitter
Saturation Voltage
V
BE(sat)
0.9
V
I
C
=200mA, I
B
=5mA*
Base-Emitter
Turn-On Voltage
V
BE(on)
0.9
V
I
C
=200mA, V
CE
=5V*
Static Forward Current
Transfer Ratio
h
FE
500
150
I
C
=100mA, V
CE
=5V*
I
C
=200mA, V
CE
=5V*
3-247
ZTX696B
C
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