參數(shù)資料
型號: ZTX553
廠商: ZETEX PLC
元件分類: 小信號晶體管
英文描述: PNP SILICON PLANAR MEDIUM POWER TRANSISTORS
中文描述: 1000 mA, 100 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-92
封裝: TO-92 COMPATIBLE, E-LINE PACKAGE-3
文件頁數(shù): 1/2頁
文件大?。?/td> 51K
代理商: ZTX553
PNP SILICON PLANAR
MEDIUM POWER TRANSISTORS
ISSUE 1 MARCH 94
FEATURES
*
100 Volt V
CEO
*
1 Amp continuous current
*
P
tot
=1 Watt
ABSOLUTE MAXIMUM RATINGS.
PARAMETER
SYMBOL
ZTX552
ZTX553
UNIT
Collector-Base Voltage
V
CBO
-100
-120
V
Collector-Emitter Voltage
V
CEO
-80
-100
V
Emitter-Base Voltage
V
EBO
-5
V
Peak Pulse Current
I
CM
-2
A
Continuous Collector Current
I
C
-1
A
Power Dissipation: at T
amb
=25°C
derate above 25°C
P
tot
1
5.7
W
mW/ °C
Operating and Storage Temperature Range
T
j:
T
stg
-55 to +200
°C
ELECTRICAL CHARACTERISTICS (at T
amb
= 25°C).
PARAMETER
SYMBOL
ZTX552
ZTX553
UNIT
CONDITIONS.
MIN.
MAX.
MIN.
MAX.
Collector-Base
Breakdown Voltage
V
(BR)CBO
-100
-120
V
I
C
=-100
μ
A
Collector-Emitter
Sustaining Voltage
V
CEO(sus)
-80
-100
V
I
C
=-10mA
Emitter-Base
Breakdown Voltage
V
(BR)EBO
-5
-5
V
I
E
=-100
μ
A
Collector Cut-Off
Current
I
CBO
-0.1
-0.1
μ
A
V
CB
=-80V
V
CB
=-100V
Emitter Cut-Off Current I
EBO
-0.1
-0.1
μ
A
V
EB
=-4V
Collector-Emitter
Saturation Voltage
V
CE(sat)
-0.25
-0.25
V
I
C
=-150mA, I
B
=-15mA*
Base-Emitter
Saturation Voltage
V
BE(sat)
-1.1
-1.1
V
I
C
=-150mA, I
B
=-15mA*
Base-Emitter
Turn-onn Voltage
V
BE(on)
-1.0
-1.0
V
I
C
=-150mA, V
CE
=-10V*
Static Forward Current
Transfer Ratio
h
FE
40
10
150
40
10
200
I
C
=-150mA, V
=-10V*
I
C
=-1A, V
CE
=-10V*
I
=-50mA, V
CE
=-10V
f=100MHz
Transition Frequency
f
T
150
150
MHz
Output Capacitance
*Measured under pulsed conditions. Pulse width=300
μ
s. Duty cycle
2%
C
obo
12
12
MHz
V
CB
=-10V, f=1MHz
E-Line
TO92 Compatible
ZTX552
ZTX553
3-196
C
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