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參數(shù)資料
| 型號： | ZTX549A |
| 廠商： | ZETEX PLC |
| 元件分類： | 小信號晶體管 |
| 英文描述： | Rotary Encoder; Contact Current Max:60mA; Switch Terminals:Connector; Output Code:Gray Code; Output Type:NPN; Resolution:8-Bit; Supply Voltage:24VDC RoHS Compliant: Yes |
| 中文描述： | 1000 mA, 30 V, PNP, Si, SMALL SIGNAL TRANSISTOR |
| 封裝： | E-LINE PACKAGE-3 |
| 文件頁數(shù)： | 1/3頁 |
| 文件大?。?/td> | 56K |
| 代理商： | ZTX549A |
PNP SILICON PLANAR
MEDIUM POWER TRANSISTORS
ISSUE 1 MARCH 94
FEATURES
*
30 Volt V
CEO
*
1 Amp continuous current
*
P
tot
= 1 Watt
ABSOLUTE MAXIMUM RATINGS.
PARAMETER
SYMBOL
VALUE
UNIT
Collector-Base Voltage
V
CBO
-35
V
Collector-Emitter Voltage
V
CEO
-30
V
Emitter-Base Voltage
V
EBO
-5
V
Peak Pulse Current
I
CM
-2
A
Continuous Collector Current
I
C
-1
A
Power Dissipation: at T
amb
=25°C
derate above 25°C
P
tot
1
5.7
W
mW/ °C
Operating and Storage Temperature Range
T
j
:T
stg
-55 to +200
°C
ELECTRICAL CHARACTERISTICS (at T
amb
= 25°C unless otherwise stated).
PARAMETER
SYMBOL
MIN.
TYP.
MAX.
UNIT
CONDITIONS.
I
C
=-100
μ
A
Collector-Base Breakdown
Voltage
V
(BR)CBO
-35
V
Collector-Emitter
Breakdown Voltage
V
(BR)CEO
-30
V
I
C
=-10mA
Emitter-Base Breakdown
Voltage
V
(BR)EBO
-5
V
I
E
=-100
μ
A
Collector Cut-Off Current
I
CBO
-0.1
-10
μ
A
μ
A
μ
A
V
CB
=-30V
V
CB
=-30V, T
amb
=100°C
V
EB
=-4V
I
C
=-1A, I
B
=-100mA*
I
C
=-2A, I
B
=-200mA*
I
C
=-100mA, I
B
=-1mA*
I
C
=-1A, I
B
=-100mA*
Emitter Cut-Off Current
I
EBO
V
CE(sat)
-0.1
Collector-Emitter
Saturation Voltage
-0.25
-0.50
-0.50
-0.75
V
V
ZTX549A
-0.30
V
Base-Emitter
Saturation Voltage
V
BE(sat)
-0.9
-1.25
V
Base-Emitter
Saturation Voltage
V
BE(on)
-0.85
-1
V
IC=-1A, V
CE
=-2V*
Static Forward Current
Transfer Ratio
h
FE
70
80
40
200
130
80
I
C
=-50mA, V
=-2V*
I
C
=-1A, V
CE
=-2V*
I
C
=-2A, V
CE
=-2V*
I
C
=-500mA, V
CE
=-2V*
I
C
=-500mA, V
CE
=-2V*
ZTX549
100
160
300
ZTX549A
150
200
500
*Measured under pulsed conditions. Pulse width=300
μ
s. Duty cycle
≤
2%
ZTX549
ZTX549A
3-191
C
E-Line
TO92 Compatible
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
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| ZTX549STOA | 功能描述:兩極晶體管 - BJT PNP Medium Power RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
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