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參數(shù)資料
| 型號： | ZCN0545A |
| 廠商： | Electronic Theatre Controls, Inc. |
| 英文描述： | N-CHANNEL ENHANCEMENT MODE VERTICAL IGBT |
| 中文描述： | N溝道IGBT的增強型立式 |
| 文件頁數(shù)： | 2/3頁 |
| 文件大?。?/td> | 119K |
| 代理商： | ZCN0545A |
ELECTRICAL CHARACTERISTICS (at T
amb
= 25°C unless otherwise stated).
PARAMETER
SYMBOL MIN.
TYP.
MAX.
UNIT CONDITIONS.
Forward Drain-Source
Breakdown Voltage
BV
DSS
450
V
V
GS
=0V
Reverse Drain-Source
Breakdown Voltage (4)
BV
SD
30
V
I
D
=1mA
Gate-Source
Threshold Voltage
V
GS(th)
1
3
V
ID=1mA, V
DS
= V
GS
Gate-Body Leakage
I
GSS
20
nA
V
GS
=
±
20V, V
DS
=0V
Zero Gate Voltage
Drain Current
I
DSS
10
400
μ
A
μ
A
V
DS
=max. rating, V
=0
V
=0.8 x max. rating, V
GS
=0V,
T=125°C
(2)
Drain Source
Saturation Voltage (1)
V
DS(SAT)
3
3
V
V
I
D
=500mA, V
GS
=10 V
I
D
=250mA, V
GS
=5 V
Static Drain-Source
On-State Resistance (1)
R
DS(on)
6
V
GS
=10V,I
D
=0.5A
Input Capacitance (2)
C
iss
90
pF
Common Source
Output Capacitance (2)
C
oss
12
pF
V
DS
=25 V, V
GS
=0V, f=1MHz
Reverse Transfer
Capacitance (2)
C
rss
6
pF
Switching Times (2)(3)
t
on
150
ns
V
DD
≈
25V, V
=10V
I
D
GS
=50
t
off
200
300
ns
(1) Measured under pulsed conditions. Width=300
μ
s. Duty cycle
≤
2% (2) Sample test.
(3) Switching times measured with 50
source impedance and <5ns rise time on a pulse generator
(4) One minute maximum duration. Exceeds common international automotive reverse battery test
specifications
ZCN0545A
0
25
50
75
100
125
0
0.2
0.4
0.6
0.8
100us
1ms
10ms
100ms
1s
10s
100s
0
40
80
120
160
Pulse Width
200
t
1
t
p
D=t
1
t
p
D=1 (DC)
D=0.5
D=0.2
D=0.1
SINGLEPULSE
Derating Curve
Transient Thermal Resistance
Temperature
3-113
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