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參數(shù)資料
| 型號： | ZCN0545A |
| 廠商： | Electronic Theatre Controls, Inc. |
| 英文描述： | N-CHANNEL ENHANCEMENT MODE VERTICAL IGBT |
| 中文描述： | N溝道IGBT的增強(qiáng)型立式 |
| 文件頁數(shù)： | 1/3頁 |
| 文件大小： | 119K |
| 代理商： | ZCN0545A |
N-CHANNEL ENHANCEMENT
MODE VERTICAL IGBT
ISSUE 2 MAY 94
This IGBT combines the high input impedance of the DMOSFET
with the high current density of the BJT.
FEATURES
*
Extremely low on state voltage
*
No need to derate for higher temperatures
*
Excellent temperature immunity
*
High input impedance
*
Reverse blocking characteristic which is
Independent of gate bias
*
Low input capacitance
*
Characterised for logic level drive
APPLICATIONS
*
Fluorescent lamp driver
*
Automotive load drivers
*
High voltage DC-DC converters
*
Darlington replacement
*
Telecoms hook switch and earth recall switch
ABSOLUTE MAXIMUM RATINGS (at T
amb
=25°C unless otherwise stated)
PARAMETER
SYMBOL
VALUE
UNIT
Forward Drain-Source Voltage
V
DS
V
SD
I
D
I
DP
I
DMR
I
DM
V
GS
P
tot
P
DP
T
j
:T
stg
450
V
Reverse Drain Source Voltage
30
V
Continuous Drain Current
0.32
A
Practical Continuous Drain Current*
0.37
A
Pulsed Drain Current
@ T
amb
=25°C
@ T
amb
=125°C
2
1
A
A
Gate-Source Voltage
±
20
V
Power Dissipation at T
amb
=25°C
Practical Power Dissipation*
0.6
W
0.8
W
Operating and Storage Temperature Range
-55 to +125
°C
* With the device mounted in a typical manner on a P.C.B. with at least 1 sq. inch of copper.
E-Line
TO92 Compatible
3-112
D
ZCN0545A
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