參數(shù)資料
型號(hào): YG865C08R
廠商: FUJI ELECTRIC CO LTD
元件分類(lèi): 整流器
英文描述: 20 A, 80 V, SILICON, RECTIFIER DIODE, TO-220AB
封裝: PLASTIC, TO-220F, 3 PIN
文件頁(yè)數(shù): 1/6頁(yè)
文件大?。?/td> 545K
代理商: YG865C08R
1
YG865C08R
Maximum Rating and Characteristics
Maximum ratings (at Ta=25C unless otherwise specified.)
Item
Symbols
Conditions
Ratings
Units
Repetitive peak reverse voltage
VRRM
-
80
V
Isolating voltage
Viso
Terminals-to-case, AC.1min
1500
V
Average output current
Io
50Hz Square wave duty =1/2
Tc = 89C
20*
A
Non-repetitive forward surge current**
IFSM
Sine wave, 10ms 1shot
145
A
Operating junction temperature
Tj
-
150
C
Storage temperature
Tstg
-
-40 to +150
C
Note* Out put current of center tap full wave connection.
Note** Rating per element
Electrical characteristics (at Ta=25C unless otherwise specified.)
Item
Symbols
Conditions
Maximum
Units
Forward voltage***
VF
IF =10 A
0.76
V
Reverse current***
IR
VR =VRRM
175
A
Thermal resistance
Rth(j-c)
Junction to case
2.5
C/W
Note*** Rating per element
http://www.fujisemi.com
FUJI Diode
Mechanical characteristics
Item
Conditions
Maximum
Units
Mounting torque
Recommended torque
0.3 to 0.5
Nm
Approximate mass
-
1.7
g
Schottky Barrier Diode
相關(guān)PDF資料
PDF描述
YG868C06R 30 A, 60 V, SILICON, RECTIFIER DIODE, TO-220AB
YG868C08R 80 V, SILICON, RECTIFIER DIODE, TO-220AB
YG868C10R 30 A, 100 V, SILICON, RECTIFIER DIODE, TO-220AB
YG875C20R 200 V, SILICON, RECTIFIER DIODE, TO-220AB
YG906C2 20 A, 200 V, SILICON, RECTIFIER DIODE
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
YG865C10R 制造商:FUJI 制造商全稱:Fuji Electric 功能描述:Low IR Schottky barrier diode
YG865C10RSC-P 制造商:Fuji Electric 功能描述:
YG865C12R 制造商:FUJI 制造商全稱:Fuji Electric 功能描述:High Voltage Schottky barrier diode
YG865C12RSC-P 制造商:Fuji Electric 功能描述:
YG865C15R 制造商:Fuji Electric 功能描述:DIODE SCHOTTKY 2X10A 150V