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參數(shù)資料
| 型號： | YG868C08R |
| 廠商： | FUJI ELECTRIC CO LTD |
| 元件分類： | 整流器 |
| 英文描述： | 80 V, SILICON, RECTIFIER DIODE, TO-220AB |
| 封裝： | PLASTIC, TO-220F, 3 PIN |
| 文件頁數(shù)： | 1/6頁 |
| 文件大小： | 604K |
| 代理商： | YG868C08R |
1
YG868C08R
Maximum Rating and Characteristics
Maximum ratings (at Ta=25C unless otherwise specified.)
Item
Symbols
Conditions
Ratings
Units
Repetitive peak reverse voltage
VRRM
-
80
V
Isolating voltage
Viso
Terminals-to-case, AC.1min
1500
V
Average output current
Io
50Hz Square wave duty =1/2
Tc = 72C
30*
A
Non-repetitive forward surge current**
IFSM
Sine wave, 10ms 1shot
160
A
Operating junction temperature
Tj
-
150
C
Storage temperature
Tstg
-
-40 to +150
C
Note* Out put current of center tap full wave connection.
Note** Rating per element
Electrical characteristics (at Ta=25C unless otherwise specified.)
Item
Symbols
Conditions
Maximum
Units
Forward voltage***
VF
IF =15 A
0.76
V
Reverse current***
IR
VR =VRRM
200
A
Thermal resistance
Rth(j-c)
Junction to case
2.0
C/W
Note*** Rating per element
http://www.fujisemi.com
FUJI Diode
Mechanical characteristics
Item
Conditions
Maximum
Units
Mounting torque
Recommended torque
0.3 to 0.5
Nm
Approximate mass
-
1.7
g
Schottky Barrier Diode
相關(guān)PDF資料 |
PDF描述 |
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| YG868C10R | 30 A, 100 V, SILICON, RECTIFIER DIODE, TO-220AB |
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| YG906C2 | 20 A, 200 V, SILICON, RECTIFIER DIODE |
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| YG868C08RSC-P | 制造商:Fuji Electric 功能描述: |
| YG868C10R | 制造商:FUJI 制造商全稱:Fuji Electric 功能描述:Low IR Schottky barrier diode |
| YG868C10RSC-P | 制造商:Fuji Electric 功能描述: |
| YG868C12R | 制造商:FUJI 制造商全稱:Fuji Electric 功能描述:High Voltage Schottky barrier diode |
| YG868C15R | 制造商:Fuji Electric 功能描述:DIODE SCHOTTKY 2X15A 150V |
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