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參數(shù)資料
| 型號(hào)： | XU1001 |
| 廠商： | Mimix Broadband, Inc. |
| 英文描述： | 33.0-40.0 GHz GaAs MMIC Transmitter |
| 中文描述： | 33.0-40.0 GHz的砷化鎵單片發(fā)射機(jī) |
| 文件頁(yè)數(shù)： | 5/8頁(yè) |
| 文件大?。?/td> | 1408K |
| 代理商： | XU1001 |
Page 5 of 8
App Note [1] Biasing
- As shown in the bonding diagram, this device is operated with both stages in parallel.
Nominal bias is Vd=3V, Id=30mA. Power bias may be as high as Vd=5.5V, Id=60mA. It is also recommended to
use active biasing to keep the currents constant as the RF power and temperature vary; this gives the most
reproducible results. Depending on the supply voltage available and the power dissipation constraints, the
bias circuit may be a single transistor or a low power operational amplifier, with a low value resistor in series
with the drain supply used to sense the current. The gate of the pHEMT is controlled to maintain correct
drain current and thus drain voltage. The typical gate voltage needed to do this is -0.5V. Typically the gate is
protected with Silicon diodes to limit the applied voltage. Also, make sure to sequence the applied voltage
to ensure negative gate bias is available before applying the positive drain supply.
App Note [2] Bias Arrangement
- Each DC pad (Vd and Vg) needs to have DC bypass capacitance
(~100-200 pF) as close to the device as possible. Additional DC bypass capacitance (~0.01 uF) is also
recommended.
Note:
RF and IF ports are AC coupled (DC blocks on chip). LO port is DC coupled (no DC block on chip.)
These numbers were calculated based on accelerated life test information and thermal model analysis received from the fabricating foundry.
Backplate
Temperature
55 deg Celsius
75 deg Celsius
95 deg Celsius
Channel
Temperature
84 deg Celsius
104 deg Celsius
124 deg Celsius
FITs
1.31E-03
2.09E-02
2.53E-01
MTTF Hours
7.63E+11
4.79E+10
3.95E+09
Rth
-
318.0
°
C/W
-
Bias Conditions:
Vd=3.0V, Id=30 mA
Backplate
Temperature
55 deg Celsius
75 deg Celsius
95 deg Celsius
Channel
Temperature
159 deg Celsius
179 deg Celsius
199 deg Celsius
FITs
7.18E+00
4.79E+01
2.72E+02
MTTF Hours
1.39E+08
2.09E+07
3.67E+06
Rth
-
314.8
°
C/W
-
Bias Conditions:
Vd=5.5V, Id=60 mA
U1001
Mimix Broadband, Inc., 10795 Rockley Rd., Houston, Texas 77099
Tel: 281.988.4600 Fax: 281.988.4615 mimixbroadband.com
Characteristic Data and Specifications are subject to change without notice.
2005 Mimix Broadband, Inc.
Export of this item may require appropriate export licensing from the U.S. Government. In purchasing these parts, U.S. Domestic customers accept
their obligation to be compliant with U.S. Export Laws.
33.0-40.0 GHz GaAs MMIC
Transmitter
May 2005 - Rev 13-May-05
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| XU1002-QD | 17.0-25.0 GHz GaAs Transmitter QFN, 7x7mm |
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| XU1001-BD | 制造商:MIMIX 制造商全稱:MIMIX 功能描述:33.0-40.0 GHz GaAs MMIC Transmitter |
| XU1001-BD-000V | 制造商:MIMIX 制造商全稱:MIMIX 功能描述:33.0-40.0 GHz GaAs MMIC Transmitter |
| XU1001-BD-000W | 制造商:MIMIX 制造商全稱:MIMIX 功能描述:33.0-40.0 GHz GaAs MMIC Transmitter |
| XU1001-BD-EV1 | 制造商:MIMIX 制造商全稱:MIMIX 功能描述:33.0-40.0 GHz GaAs MMIC Transmitter |
| XU1002 | 制造商:MIMIX 制造商全稱:MIMIX 功能描述:18.0-25.0 GHz GaAs MMIC Transmitter |
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