x r
PRELIMINAZRY
E3 UNI FOR ATM
XRT7234
REV. P1.0.0
57
The “Read/Write” bit-fields, within this register; along with those bit-fields within the “Test Cell Header Byte -1, -2 and -4”
registers; allows the user to define the header byte patterns for each of the “test cells” that will be generated by the
Test Cell Generator. This particular register allows the user to define the pattern for the third octet of these test cells.
3.3.2.12 Test Cell Header Byte-4
The “Read/Write” bit-fields, within this register; along with those bit-fields within the “Test Cell Header Byte-1 through -3”
registers; allows the user to define the header byte patterns for each of the “test cells” that will be generated by the
Test Cell Generator. This particular register allows the user to define the pattern for the fourth octet of these test cells.
3.3.2.13 Test Cell Error Accumulator—MSB
These “Reset-upon-Read” bit fields, along with those of the “Test Cell Error Accumulator—LSB” Register (Address
= 0Dh), contains a 16-bit representation of the number of erred test cells that have been detected by the “Test Cell
Receiver” since the last read of these registers. This register contains the upper-byte value for this 16-bit expression.
Note:
The contents of these registers are valid only if the Test Cell Receiver has acquired “PRBS Lock” with the
payload data of the test cells that it has received.
3.3.2.13 Test Cell Error Accumulator—LSB
R/W
R/W
R/W
R/W
R/W
R/W
R/W
R/W
0
0
1
1
0
0
1
1
Address = 0Bh, Test Cell Header Byte-4
Bit 7
Bit 6
Bit 5
Bit 4
Bit 3
Bit 2
Bit 1
Bit 0
Test Cell Header Byte 4
R/W
R/W
R/W
R/W
R/W
R/W
R/W
R/W
0
1
0
0
0
1
0
0
Address = 0Ch, Test Cell Error Accumulator—MSB
Bit 7
Bit 6
Bit 5
Bit 4
Bit 3
Bit 2
Bit 1
Bit 0
Test Cell Error—High Byte
RUR
RUR
RUR
RUR
RUR
RUR
RUR
RUR
0
0
0
0
0
0
0
0
Address = 0Dh, Test Cell Error Accumulator—LSB
Bit 7
Bit 6
Bit 5
Bit 4
Bit 3
Bit 2
Bit 1
Bit 0
Test Cell Error—Low Byte
Address = 0Ah, Test Cell Header Byte-3