參數(shù)資料
型號(hào)： XP4654
英文描述： Composite Device - Composite Transistors
中文描述： 復(fù)合設(shè)備-復(fù)合晶體管
文件頁(yè)數(shù)： 2/6頁(yè)
文件大?。?/td> 136K
代理商： XP4654
XP04601
2
SJJ00187BED
Tr2
■
Electrical Characteristics
T
a
=
25
°
C
±
3
°
C
Tr1
Note) Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
Common characteristics chart
P
T
T
a
0
160
40
120
80
0
250
100
200
50
150
T
T
Ambient temperature T
a
(
°
C)
Parameter
Symbol
Conditions
Min
Typ
Max
Unit
Collector-base voltage (Emitter open)
V
CBO
V
CEO
I
C
=
10
μ
A, I
E
=
0
I
C
=
2 mA, I
B
=
0
I
E
=
10
μ
A, I
C
=
0
V
CB
=
20 V, I
E
=
0
V
CE
=
10 V, I
B
=
0
V
CE
=
10 V, I
C
=
2 mA
I
C
=
100 mA, I
B
=
10 mA
V
CB
=
10 V, I
E
=
1 mA, f
=
200 MHz
V
CB
=
10 V, I
E
=
0, f
=
1 MHz
60
50
7
V
Collector-emitter voltage (Base open)
V
Emitter-base voltage (Collector open)
V
EBO
V
Collector-base cutoff current (Emitter open)
I
CBO
I
CEO
0.1
100
μ
A
μ
A
Collector-emitter cutoff current (Base open)
Forward current transfer ratio
h
FE
160
460
Collector-emitter saturation voltage
V
CE(sat)
0.3
0.5
V
Transition frequency
f
T
C
ob
80
MHz
Collector output capacitance
(Common base, input open circuited)
2.7
pF
Parameter
Symbol
Conditions
Min
Typ
Max
Unit
Collector-base voltage (Emitter open)
V
CBO
I
C
=
10
μ
A, I
E
=
0
I
C
=
2
mA, I
B
=
0
I
E
=
10
μ
A, I
C
=
0
V
CB
=
20 V, I
E
=
0
V
CE
=
10 V, I
B
=
0
V
CE
=
10 V, I
C
=
2 mA
I
C
=
1
00 mA, I
B
=
1
0 mA
V
CB
=
10 V, I
E
=
2 mA, f
=
200 MHz
V
CB
=
10 V, I
E
=
0, f
=
1 MHz
60
V
Collector-emitter voltage (Base open)
V
CEO
50
V
Emitter-base voltage (Collector open)
V
EBO
I
CBO
7
V
Collector-base cutoff current (Emitter open)
0.1
μ
A
μ
A
Collector-emitter cutoff current (Base open)
I
CEO
100
Forward current transfer ratio
h
FE
160
460
Collector-emitter saturation voltage
V
CE(sat)
0.1
0.3
V
Transition frequency
f
T
C
ob
150
MHz
Collector output capacitance
(Common base, input open circuited)
3.5
pF
Note) Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
相關(guān)PDF資料
PDF描述
XP04683 Composite Device - Composite Transistors
XP4683 Composite Device - Composite Transistors
XP04601(XP4601) 複合デバイス － 複合トランジスタ
XP04654(XP4654) 複合デバイス － 複合トランジスタ
XP04683(XP4683) Composite Device - Composite Transistors
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
XP4683 制造商:PANASONIC 制造商全稱(chēng):Panasonic Semiconductor 功能描述:NPN(PNP) epitaxial planer transistor
XP4X110/1 制造商:DELTA DESIGN 功能描述:DRIVE UNIT 110V
XP4X230/1 制造商:DELTA DESIGN 功能描述:DRIVE UNIT 230V 制造商:Delta Design 功能描述:DRIVE UNIT, 230V 制造商:DELTA DESIGN 功能描述:DRIVE UNIT, 230V; IP / NEMA Rating:IP67; Flash Rate Per Minute:75; Power Rating:1W; Bulb Diameter:36mm; Current Rating:30mA; External Depth:45mm; External Diameter:36mm; External Length / Height:34mm; External Width:43mm; Flash ;RoHS Compliant: Yes
XP4X230/1 制造商:DELTA DESIGN 功能描述:DRIVE UNIT 230V
XP4XMV/1 制造商:DELTA DESIGN 功能描述:DRIVE UNIT MULTIVOLTAGE 制造商:Delta Design 功能描述:DRIVE UNIT, MULTIVOLTAGE 制造商:DELTA DESIGN 功能描述:XENON FLASHING STROBE, 100V, 190mA, 1W; IP / NEMA Rating:IP67; Flash Rate Per Minute:75; Power Rating:1W; Bulb Diameter:36mm; Current Rating:190mA; External Depth:45mm; External Width:43mm; Length:57mm; Light Source:Xenon ;RoHS Compliant: Yes
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