- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄375039 > XP1507 (PANASONIC CORP) RES CERAMIC 8MHZ .5% SMD PDF資料下載
參數(shù)資料
| 型號(hào)： | XP1507 |
| 廠商： | PANASONIC CORP |
| 元件分類： | 小信號(hào)晶體管 |
| 英文描述： | RES CERAMIC 8MHZ .5% SMD |
| 中文描述： | 50 mA, 150 V, 2 CHANNEL, NPN, Si, SMALL SIGNAL TRANSISTOR |
| 封裝： | SC-88A, 5 PIN |
| 文件頁(yè)數(shù)： | 1/2頁(yè) |
| 文件大?。?/td> | 31K |
| 代理商： | XP1507 |
1
Composite Transistors
XP1507
Silicon NPN epitaxial planer transistor
High breakdown voltage and for low noise amplification
I
Features
G
Two elements incorporated into one package.
(Emitter-coupled transistors)
G
Reduction of the mounting area and assembly cost by one half.
I
Basic Part Number of Element
G
2SD814
×
2 elements
I
Absolute Maximum Ratings
(Ta=25C)
Unit: mm
Marking Symbol:
4O
Internal Connection
1 : Base (Tr1)
2 : Emitter
3 : Base (Tr2)
4 : Collector (Tr2)
5 : Collector (Tr1)
EIAJ : SC–88A
S–Mini Type Package (5–pin)
2.1
±
0.1
1.25
±
0.1
0.425
0
±
0
2
±
0
0
1
2
3
4
5
0
±
0
±
0
0
0
0
+
–
0.2
±
0.1
0.425
0
Parameter
Symbol
Ratings
Unit
Collector to base voltage
V
CBO
V
CEO
V
EBO
I
C
I
CP
P
T
T
j
T
stg
150
V
Collector to emitter voltage
150
V
Emitter to base voltage
5
V
Collector current
50
mA
Peak collector current
100
mA
Total power dissipation
150
mW
Junction temperature
150
C
Storage temperature
–55 to +150
C
Rating
of
element
Overall
I
Electrical Characteristics
(Ta=25C)
Parameter
Symbol
Conditions
min
typ
max
Unit
Collector to emitter voltage
V
CEO
V
EBO
I
CBO
h
FE
I
C
= 100
μ
A, I
B
= 0
I
E
= 10
μ
A, I
C
= 0
V
CB
= 100V, I
E
= 0
V
CE
= 5V, I
C
= 10mA
V
CE
= 5V, I
C
= 10mA
I
C
= 30mA, I
B
= 3mA
V
CB
= 10V, I
E
= –10mA, f = 200MHz
V
CB
= 10V, I
E
= 0, f = 1MHz
150
V
Emitter to base voltage
5
V
Collector cutoff current
1
μ
A
Forward current transfer ratio
90
450
Forward current transfer h
FE
ratio
h
FE
(small/large)
*1
V
CE(sat)
f
T
C
ob
0.5
0.99
Collector to emitter saturation voltage
1
V
Transition frequency
150
MHz
Collector output capacitance
2.3
pF
*1
Ratio between 2 elements
1
5
Tr2
Tr1
2
3
4
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| XP1554 | Silicon NPN epitaxial planer transistor |
| XP1601 | Silicon PNP(PNP) epitaxial planer transistor |
| XP1B301 | CANMS3470L16-8SL/C |
| XP1D873 | Silicon N-channel junction FET |
| XP1D874 | N-channel junction FET |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| XP151A01C3MR | 制造商:TOREX 制造商全稱:Torex Semiconductor 功能描述:N-Channel Power MOS FET |
| XP151A02B0MR | 制造商:TOREX 制造商全稱:Torex Semiconductor 功能描述:Power MOS FET |
| XP151A02BOMR | 制造商:TOREX 制造商全稱:Torex Semiconductor 功能描述:N-Channel Power MOS FET with low on-state resistance and ultra High-Speed Switching Characteristics. |
| XP151A03A7MR | 制造商:TOREX 制造商全稱:Torex Semiconductor 功能描述:Power MOS FET |
| XP151A11B0MR | 功能描述:MOSFET N-CH 30V 1A SOT23 RoHS:是 類別:分離式半導(dǎo)體產(chǎn)品 >> FET - 單 系列:- 標(biāo)準(zhǔn)包裝:1,000 系列:MESH OVERLAY™ FET 型:MOSFET N 通道，金屬氧化物 FET 特點(diǎn):邏輯電平門 漏極至源極電壓(Vdss):200V 電流 - 連續(xù)漏極(Id) @ 25° C:18A 開(kāi)態(tài)Rds（最大）@ Id, Vgs @ 25° C:180 毫歐 @ 9A，10V Id 時(shí)的 Vgs(th)（最大）:4V @ 250µA 閘電荷(Qg) @ Vgs:72nC @ 10V 輸入電容 (Ciss) @ Vds:1560pF @ 25V 功率 - 最大:40W 安裝類型:通孔 封裝/外殼:TO-220-3 整包 供應(yīng)商設(shè)備封裝:TO-220FP 包裝:管件 |
發(fā)布緊急采購(gòu)，3分鐘左右您將得到回復(fù)。