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參數(shù)資料
| 型號： | XP1D873 |
| 廠商： | PANASONIC CORP |
| 元件分類： | 小信號晶體管 |
| 英文描述： | Silicon N-channel junction FET |
| 中文描述： | 30 mA, 50 V, 2 CHANNEL, N-CHANNEL, Si, SMALL SIGNAL, JFET |
| 封裝： | SMINI5-G1, SC-88A, 5 PIN |
| 文件頁數(shù)： | 1/2頁 |
| 文件大?。?/td> | 29K |
| 代理商： | XP1D873 |
1
Composite Transistors
XP1D873
Silicon N-channel junction FET
For analog switching
I
Features
G
Two elements incorporated into one package.
(Drain-coupled FETs)
G
Reduction of the mounting area and assembly cost by one half.
G
Low-frequency and low-noise J-FET.
I
Basic Part Number of Element
G
2SK1103
×
2 elements
I
Absolute Maximum Ratings
(Ta=25C)
Unit: mm
Marking Symbol:
OC
Internal Connection
Parameter
Symbol
Ratings
Unit
Gate to drain voltage
V
GDS
I
D
I
G
P
T
T
ch
T
stg
–50
V
Drain current
30
mA
Gate current
10
mA
Total power dissipation
150
mW
Channel temperature
150
C
Storage temperature
–55 to +150
C
Rating
of
element
Overall
1 : Source (FET1)
2 : Drain (FET1, 2)
3 : Source (FET2)
4 : Gate (FET2)
5 : Gate (FET1)
EIAJ : SC–88A
S–Mini Type Package (5–pin)
2.1
±
0.1
1.25
±
0.1
0.425
0
±
0
2
±
0
0
1
2
3
4
5
0
±
0
±
0
0
0
0
+
–
0.2
±
0.1
0.425
0
I
Electrical Characteristics
(Ta=25C)
Parameter
Symbol
Conditions
min
typ
max
Unit
Drain voltage
V
GDS
I
DSS
I
GSS
V
GSC
g
m
R
DS(on)
C
iss
C
rss
C
oss
I
G
= –10
μ
A, V
DS
= 0
V
DS
= 10V, V
GS
= 0
V
GS
= –30V, V
DS
= 0
V
DS
= 10V, I
D
= 10
μ
A
V
DS
= 10V, I
D
= 1mA, f = 1kHz
V
DS
= 10mV, V
GS
= 0
V
DS
= 10V, V
GS
= 0, f = 1MHz
V
DS
= 10V, V
GS
= 0, f = 1MHz
V
DS
= 10V, V
GS
= 0, f = 1MHz
–50
V
Drain current
0.2
6.0
mA
Gate cutoff current
–10
nA
Gate to source cutoff voltage
–1.5
–3.5
V
Mutual conductance
1.8
2.5
mS
Drain ON resistance
300
Common source short-circuit input capacitance
7
pF
Common source reverse transfer capacitance
1.5
pF
Common source short-circuit output capacitance
1.5
pF
1
FET 2
FET 1
2
3
4
5
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