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參數(shù)資料
| 型號(hào)： | XP134A11A1SR |
| 廠商： | TOREX SEMICONDUCTOR LTD. |
| 英文描述： | P-Channel Power MOS FET |
| 中文描述： | P溝道功率MOS場(chǎng)效應(yīng)管 |
| 文件頁數(shù)： | 2/4頁 |
| 文件大小： | 0K |
| 代理商： | XP134A11A1SR |
u
DC characteristics
Ta=25
:
s Electrical Characteristics
PARAMETER
UNITS
Gate-Source Cut-off Voltage
Vgs(off)
-1.0
-2.5
V
0.11
0.09
Id=-2A, Vgs=-4.5V
Gate-Source Leakage Current
Igss
A
±1
Forward Transfer Admittance
(note)
5S
Body Drain Diode
Forward Voltage
-0.85
-1.1
V
Drain Cut-off Current
Idss
-10
A
Vf
Vds=-30V, Vgs=0V
Id=-1mA, Vds=-10V
Id=-2A, Vds=-10V
If=-4A, Vgs=0V
Vgs=
±20V, Vds=0V
Drain-Source On-state
Resistance (note)
Rds(on)
Id=-2A, Vgs=-10V
0.055
0.065
SYMBOL
CONDITIONS
MAX
MIN
TYP
PARAMETER
UNITS
Feedback Capacitance
Crss
pF
Output Capacitance
Coss
pF
Input Capacitance
Ciss
170
450
680
pF
Vds=-10V, Vgs=0V
f=1MHz
SYMBOL
CONDITIONS
MAX
MIN
TYP
Dynamic characteristics
Ta=25
:
Effective during pulse test.
Note:
Yfs
PARAMETER
UNITS
Fall Time
tf
ns
Rise Time
tr
ns
Turn-on Delay Time
td (on)
20
Turn-off Delay Time
td (off)
ns
30
20
15
ns
Vgs=-5V, Id=-2A
Vdd=-10V
SYMBOL
CONDITIONS
MAX
MIN
TYP
Switching characteristics
Ta=25
:
PARAMETER
UNITS
Rth (ch-a)
Thermal Resistance
(channel-surroundings)
62.5
:/W
Implement on a glass epoxy
resin PCB
SYMBOL
CONDITIONS
MAX
MIN
TYP
Thermal characteristics
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