參數(shù)資料
型號(hào): XP134A11A1SR
廠商: TOREX SEMICONDUCTOR LTD.
英文描述: P-Channel Power MOS FET
中文描述: P溝道功率MOS場(chǎng)效應(yīng)管
文件頁(yè)數(shù): 1/4頁(yè)
文件大?。?/td> 0K
代理商: XP134A11A1SR
u
8D1
1
S1
5D2
4
G2
6D2
3
S2
7D1
2
G1
x P-Channel Power MOS FET
x DMOS Structure
x Low On-State Resistance: 0.11 MAX
x Ultra High-Speed Switching
x SOP-8 Package
x Two FET Devices built-in
s Applications
q Notebook PCs
q Cellular and portable phones
q On-board power supplies
q Li-ion battery systems
s General Description
The XP134A11A1SR is a P-Channel Power MOS FET with low on-state
resistance and ultra high-speed switching characteristics.
Two FET devices are built into the one package.
Because high-speed switching is possible, the IC can be efficiently set
thereby saving energy.
The small SOP-8 package makes high density mounting possible.
s Features
Low on-state resistance: Rds(on)=0.065
(Vgs=-10V)
Rds(on)=0.11
(Vgs=-4.5V)
Ultra high-speed switching
Operational Voltage: -4.5V
High density mounting: SOP-8
s Absolute Maximum Ratings
s Equivalent Circuit
s Pin Configuration
P-Channel MOS FET
(2 devices built-in)
PARAMETER
Drain-Source Voltage
Gate-Source Voltage
Drain Current (DC)
Drain Current (Pulse)
Reverse Drain Current
Continuous Channel
Power Dissipation (note)
Channel Temperature
Storage Temperature
Vdss
Vgss
Id
Idp
Idr
Pd
Tch
Tstg
-30
±20
-4
-16
-4
2
150
-55~150
V
A
W
:
SYMBOL
RATINGS
UNITS
s Pin Assignment
PIN
NUMBER
PIN
NAME
FUNCTION
1
3
2
S1
S2
G1
Source
Gate
4
7~8
5~6
G2
D1
D2
Gate
Drain
8
1
5
4
6
3
7
2
SOP-8
(TOP VIEW)
Ta=25
:
When implemented on a glass epoxy PCB
Note:
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