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參數(shù)資料
| 型號： | XN7651 |
| 英文描述： | TRANSISTOR | BJT | PAIR | COMPLEMENTARY | 10V V(BR)CEO | 550MA I(C) | SC-74 |
| 中文描述： | 晶體管|晶體管|一對|互補| 10V的五（巴西）總裁| 550MA一（c）|律師- 74 |
| 文件頁數(shù)： | 2/5頁 |
| 文件大小： | 83K |
| 代理商： | XN7651 |
XN07651
2
SJJ002
43
AED
I
Electrical characteristics
T
a
=
25
°
C
±
2
°
C
Tr1
Parameter
Symbol
Conditions
Min
Typ
Max
Unit
Collector to base voltage
V
CBO
V
CEO
V
EBO
I
C
=
10
μ
A, I
E
=
0
I
C
=
1 mA, I
B
=
0
I
E
=
10
μ
A, I
C
=
0
V
CB
=
15 V, I
E
=
0
V
CE
=
2 V, I
C
=
0.5 A
V
CE
=
2 V, I
C
=
1 A
I
C
=
0.3 A, I
B
=
8 mA
I
C
=
0.7 A, I
B
=
8 mA
I
F
=
0.55 A
V
CB
=
10 V, I
E
=
50 mA, f
=
200 MHz
V
CB
=
10 V, I
E
=
0, f
=
1 MHz
20
V
Collector to emittter voltage
15
V
Emitter to base voltage
7
V
Collector cutoff current
I
CBO
h
FE1
*1
h
FE2
*1
V
CE(sat)1
*1
V
CE(sat)2
*1
V
F
*2
0.1
μ
A
Forward current transfer ratio
200
800
60
Collector to emitter saturation voltage
0.2
V
0.5
V
Diode forward voltage
1.4
V
Transition frequency
f
T
C
ob
200
MHz
Collector output capacitance
10
pF
Tr2
Parameter
Symbol
Conditions
Min
Typ
Max
Unit
Collector to base voltage
V
CBO
V
CEO
V
EBO
I
C
=
10
μ
A, I
E
=
0
I
C
=
1 mA, I
B
=
0
I
E
=
10
μ
A, I
C
=
0
V
CB
=
10 V, I
E
=
0
V
CE
=
2 V, I
C
=
0.5 A
V
CE
=
2 V, I
C
=
1 A
I
C
=
0.3 A, I
B
=
8 mA
I
C
=
0.7 A, I
B
=
8 mA
V
CB
=
10 V, I
E
=
50 mA, f
=
200 MHz
V
CB
=
10 V, I
E
=
0, f
=
1 MHz
15
10
7
V
Collector to emittter voltage
V
Emitter to base voltage
V
Collector cutoff current
I
CBO
h
FE1
*1
h
FE2
*1
V
CE(sat)1
*1
V
CE(sat)2
*1
f
T
0.1
μ
A
Forward current transfer ratio
100
350
60
Collector to emitter saturation voltage
0.22
0.6
V
V
Transition frequency
130
MHz
Collector output capacitance
C
ob
22
pF
Note)*1: Pulse measurement
*2: Effective for the transistor with a built-in diode
Common characteristics chart
P
T
T
a
400
350
150
200
300
250
100
50
00
40
60
20
Ambient temperature T
a
(
°
C)
80
100 120 140 160
T
T
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