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參數(shù)資料
| 型號： | XN7651 |
| 英文描述： | TRANSISTOR | BJT | PAIR | COMPLEMENTARY | 10V V(BR)CEO | 550MA I(C) | SC-74 |
| 中文描述： | 晶體管|晶體管|一對|互補| 10V的五（巴西）總裁| 550MA一（c）|律師- 74 |
| 文件頁數(shù)： | 1/5頁 |
| 文件大?。?/td> | 83K |
| 代理商： | XN7651 |
Composite Transistors
XN07651
(XN7651)
Silicon NPN epitaxial planer transistor (Tr1)
Silicon PNP epitaxial planer transistor (Tr2)
1
Publication date: September 2001
SJJ002
43
AED
For motor drive
I
Features
Two elements incorporated into one package
Reduction of the mounting area and assembly cost by one half
I
Basic Part Number of Element
2SB0970 (2SB970)
+
ARN-5
I
Abosolute Maximum Ratings
T
a
=
25
°
C
Marking Symbol: 9W
Internal Connection
Unit: mm
1: Collector (Tr1)
2: Emitter (Tr2)
3: Base (Tr2)
EIAJ : SC-74
4: Collector (Tr2)
5: Base (Tr1)
6: Emitter (Tr1)
Mini6-G1 Package
Parameter
Symbol
Rating
Unit
Tr1
Collector to base voltage
V
CBO
20
V
Collector to emitter voltage
V
CEO
V
EBO
I
C
15
V
Emitter to base voltage
7
V
Collector current
0.55
A
Peak collector current
Collector current
*1
I
CP
I
C
V
CBO
1.1
A
0.7
A
Tr2
Collector to base voltage
15
10
7
0.55
1.1
0.7
V
Collector to emitter voltage
V
CEO
V
EBO
I
C
V
Emitter to base voltage
V
Collector current
A
Peak collector current
Collector current
*1
I
CP
I
C
P
T
A
A
Overall
Total power dissipation
Total power dissipation
*2
350
mW
P
T
T
j
T
stg
750
mW
Junction temperature
150
°
C
°
C
Storage temperature
55 to
+
150
2.90
1.9
±0.1
(0.95)
0.16
+0.10
2
+
–
1
+
–
1
0
+
–
1
(
0
±
+
–
0.30
0.50
+0.10
+0.10
(0.95)
6
5
4
1
3
2
+0.20
5
°
10
°
6
Tr2
Tr1
5
4
3
1
2
Note)*1: T
a
=
20
°
C
±
2
°
C
*2: An instantaneous total power dissipation (for the single pulse of 50 ms)
Note) The part number in the parenthesis shows conventional part number.
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