參數(shù)資料
型號: XN1A311
英文描述: Composite Device - Composite Transistors
中文描述: 復(fù)合設(shè)備-復(fù)合晶體管
文件頁數(shù): 1/5頁
文件大?。?/td> 115K
代理商: XN1A311
Composite Transistors
XN0A311
(XN1A311)
Silicon NPN epitaxial planar type (Tr1)
Silicon PNP epitaxial planar type (Tr2)
1
Publication date: December 2003
SJJ00234CED
For switching
Features
Two elements incorporated into one package
(Transistors with built-in resistor)
Reduction of the mounting area and assembly cost by one half
Basic Part Number
UNR2211 (UN2211)
+
UNR2111 (UN2111)
Absolute Maximum Ratings
T
a
=
25
°
C
Marking Symbol: FN
Internal Connection
5
Tr2
Tr1
4
3
2
1
Note) The part number in the parenthesis shows conventional part number.
Parameter
Symbol
Rating
Unit
Tr1
Collector-base voltage
(Emitter open)
V
CBO
50
V
Collector-emitter voltage
(Base open)
V
CEO
50
V
Collector current
I
C
100
50
mA
Tr2
Collector-base voltage
(Emitter open)
V
CBO
V
Collector-emitter voltage
(Base open)
V
CEO
50
V
Collector current
I
C
100
mA
Overall
Total power dissipation
P
T
300
mW
Junction temperature
T
j
T
stg
150
°
C
°
C
Storage temperature
55 to
+
150
Unit: mm
1: Collector (Tr1)
Base (Tr2)
2: Collector (Tr2)
EIAJ: SC-74A
3: Emitter (Tr2)
4: Base (Tr1)
5: Emitter (Tr1)
Mini5-G1 Package
2.90
1.9
(0.95) (0.95)
0.16
+0.10
2
+
1
+
1
0
+
1
(
0
±
0
+
0.30
+0.10
5
4
3
1
2
+0.20
5
10
相關(guān)PDF資料
PDF描述
XN0A311(XN1A311) 複合デバイス - 複合トランジスタ
XN0A312(XN1A312) 複合デバイス - 複合トランジスタ
XN0B301 Composite Device - Composite Transistors
XN1B301 Composite Device - Composite Transistors
XN0B301(XN1B301) 複合デバイス - 複合トランジスタ
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
XN1A312 制造商:PANASONIC 制造商全稱:Panasonic Semiconductor 功能描述:Silicon NPN(PNP) epitaxial planer transistor
XN-1AO-I 制造商:Moeller Electric Corporation 功能描述:1 ANALOG OUTPUT PLUG-IN MODULE 0-20MA OR 4-20MA
XN1B301 制造商:Panasonic Industrial Company 功能描述:TRANSISTOR
XN1C301 制造商:PANASONIC 制造商全稱:Panasonic Semiconductor 功能描述:Silicon PNP(NPN) epitaxial planer transistor
XN1D873 制造商:PANASONIC 制造商全稱:Panasonic Semiconductor 功能描述:Silicon N-channel junction FET