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參數(shù)資料
| 型號： | XN0A554(XN6A554) |
| 英文描述： | Composite Device - Transistors with built-in Resistor |
| 中文描述： | 復合裝置-內(nèi)置晶體管，電阻， |
| 文件頁數(shù)： | 1/3頁 |
| 文件大?。?/td> | 52K |
| 代理商： | XN0A554(XN6A554) |
1
Composite Transistors
XN0A554
(XN6A554)
Silicon NPN epitaxial planer transistor
For high speed switching
I
Features
G
Two elements incorporated into one package.
G
Reduction of the mounting area and assembly cost by one half.
G
Low V
CE(sat)
.
I
Basic Part Number of Element
G
2SC3757
×
2 elements
I
Absolute Maximum Ratings
(Ta=25C)
Unit: mm
0.16
+0.10
Marking Symbol:
DT
Internal Connection
Parameter
Symbol
Ratings
Unit
Collector to base voltage
V
CBO
V
CEO
V
EBO
I
C
I
CP
P
T
T
j
T
stg
40
V
Collector to emitter voltage
40
V
Emitter to base voltage
5
V
Collector current
100
mA
Peak collector current
300
mA
Total power dissipation
300
mW
Junction temperature
150
C
Storage temperature
–55 to +150
C
Rating
of
element
Overall
1 : Collector (Tr1)
2 : Base (Tr2)
3 : Collector (Tr2)
4 : Emitter (Tr2)
5 : Emitter (Tr1)
6 : Base (Tr1)
EIAJ : SC–74
Mini6-G1 Package
2.90
1.9
±0.1
(0.95)
2
+
–
1
+
–
1
0
+
–
1
(
0
±
+
–
0.30
+0.10
0.50
+0.10
(0.95)
6
5
4
1
3
2
+0.20
5
°
10
°
I
Electrical Characteristics
(Ta=25C)
Parameter
Symbol
Conditions
min
typ
max
Unit
Collector cutoff current
I
CBO
I
EBO
h
FE
V
CB
= 40V, I
E
= 0
V
EB
= 4V, I
C
= 0
V
CE
= 1V, I
C
= 10mA
V
CE
= 1V, I
C
= 10mA
I
C
= 10mA, I
B
= 1mA
I
C
= 10mA, I
B
= 1mA
V
CE
= 10V, I
E
= –10mA, f = 200MHz
V
CB
= 10V, I
E
= 0, f = 1MHz
0.1
μ
A
μ
A
Emitter cutoff current
0.1
Forward current transfer ratio
60
320
Forward current transfer h
FE
ratio
h
FE
(small/large)
*1
V
CE(sat)
V
BE(sat)
f
T
C
ob
t
on
t
off
t
stg
0.5
0.99
Collector to emitter saturation voltage
0.17
0.25
V
Base to emitter saturation voltage
1.0
V
Transition frequency
450
MHz
Collector output capacitance
2
6
pF
Turn-off time
17
Turn-on time
*2
17
ns
Storage time
10
*1
Ratio between 2 elements
*2
Test Circuits
6
1
2
Tr2
Tr1
5
4
3
Note) The Part number in the Parenthesis shows conventional part number.
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