參數(shù)資料
型號： XN04604
廠商： PANASONIC CORP
元件分類： 功率晶體管
英文描述： Composite Device - Composite Transistors
中文描述： 500 mA, 20 V, 2 CHANNEL, NPN AND PNP, Si, SMALL SIGNAL TRANSISTOR
封裝： ROHS COMPLIANT, MINI6-G1, SC-74, 6 PIN
文件頁數(shù)： 2/5頁
文件大小： 117K
代理商： XN04604
XN04604
2
SJJ00084BED
Tr2
■
Electrical Characteristics
T
a
=
25
°
C
±
3
°
C
Tr1
Parameter
Symbol
Conditions
Min
Typ
Max
Unit
Collector-base voltage (Emitter open)
V
CBO
V
CEO
I
C
=
10
μ
A, I
E
=
0
I
C
=
1 mA, I
B
=
0
I
E
=
10
μ
A, I
C
=
0
V
CB
=
10 V, I
E
=
0
V
CE
=
2 V, I
C
=
0.5 A
V
CE
=
2 V, I
C
=
1 A
I
C
=
0.4 A, I
B
=
8 mA
I
C
=
0.4 A, I
B
=
8 mA
V
CB
=
10 V, I
E
=
50 mA, f
=
200 MHz
V
CB
=
10 V, I
E
=
0, f
=
1 MHz
15
10
7
V
Collector-emitter voltage (Base open)
V
Emitter-base voltage (Collector open)
V
EBO
V
Collector-base cutoff current (Emitter open)
I
CBO
h
FE1
0.1
μ
A
Forward current transfer ratio
*
100
350
h
FE2
60
Collector-emitter saturation voltage
V
CE(sat)
V
BE(sat)
0.16
0.8
0.30
1.2
V
Base-emitter saturation voltage
V
Transition frequency
f
T
C
ob
130
MHz
Collector output capacitance
(Common base, input open circuited)
22
pF
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
2.*: Pulse measurement
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
2.*1: Pulse measurement
*2: R
on
test circuit
Parameter
Symbol
Conditions
Min
Typ
Max
Unit
Collector-base voltage (Emitter open)
V
CBO
I
C
=
10
μ
A, I
E
=
0
I
C
=
1 mA, I
B
=
0
I
E
=
10
μ
A, I
C
=
0
V
CB
=
25 V, I
E
=
0
V
CE
=
2 V, I
C
=
0.5 A
V
CE
=
2 V, I
C
=
1 A
I
C
=
0.5 A, I
B
=
20 mA
I
C
=
0.5 A, I
B
=
20 mA
V
CB
=
10 V, I
E
=
50 mA, f
=
200 MHz
V
CB
=
10 V, I
E
=
0, f
=
1 MHz
25
V
Collector-emitter voltage (Base open)
V
CEO
20
V
Emitter-base voltage (Collector open)
V
EBO
I
CBO
12
V
Collector-base cutoff current (Emitter open)
Forward current transfer ratio
*1
0.1
μ
A
h
FE1
200
800
h
FE2
V
CE(sat)
60
Collector-emitter saturation voltage
*1
Base-emitter saturation voltage
*1
0.13
0.40
V
V
BE(sat)
1.2
V
Transition frequency
f
T
C
ob
200
MHz
Collector output capacitance
(Common base, input open circuited)
ON resistance
*2
10
pF
R
on
1.0
V
V
1 k
on
=
V
B
×
1
000
R
A
V
B
(
)
f
=
1 kHz
V
=
0.3 V
V
B
I
B
=
1 mA
V
A
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參數(shù)描述
XN04604(XN4604) 制造商:未知廠家 制造商全稱:未知廠家 功能描述:複合デバイス － 複合トランジスタ
XN0460400L 功能描述:TRANS ARRAY PNP/NPN MINI-6P RoHS:是 類別:分離式半導(dǎo)體產(chǎn)品 >> 晶體管(BJT) - 陣列 系列:- 標準包裝:10,000 系列:- 晶體管類型:2 NPN（雙） 電流 - 集電極 (Ic)（最大）:100mA 電壓 - 集電極發(fā)射極擊穿（最大）:45V Ib、Ic條件下的Vce飽和度（最大）:600mV @ 5mA，100mA 電流 - 集電極截止（最大）:- 在某 Ic、Vce 時的最小直流電流增益 (hFE):200 @ 2mA，5V 功率 - 最大:250mW 頻率 - 轉(zhuǎn)換:250MHz 安裝類型:表面貼裝 封裝/外殼:6-TSSOP，SC-88，SOT-363 供應(yīng)商設(shè)備封裝:PG-SOT363-6 包裝:帶卷 (TR) 其它名稱:SP000747402
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XN04608(XN4608) 制造商:未知廠家 制造商全稱:未知廠家 功能描述:複合デバイス － 複合トランジスタ
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