- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄206197 > XN01116(XN1116) 複合デバイス － 複合トランジスタ PDF資料下載
參數(shù)資料
| 型號： | XN01116(XN1116) |
| 英文描述： | 複合デバイス － 複合トランジスタ |
| 中文描述： | 複合デバイス-複合トランジスタ |
| 文件頁數(shù)： | 1/3頁 |
| 文件大?。?/td> | 46K |
| 代理商： | XN01116(XN1116) |
1
Composite Transistors
XN01111 (XN1111)
Silicon PNP epitaxial planer transistor
For switching/digital circuits
s Features
q
Two elements incorporated into one package.
(Emitter-coupled transistors with built-in resistor)
q
Reduction of the mounting area and assembly cost by one half.
s Basic Part Number of Element
q
UNR1111(UN1111)
× 2 elements
s Absolute Maximum Ratings (Ta=25C)
1 : Collector (Tr1)
4 : Emitter
2 : Collector (Tr2)
5 : Base (Tr1)
3 : Base (Tr2)
EIAJ : SC–74A
Mini5-G1 Pakage
Unit: mm
Marking Symbol:
9S
Internal Connection
Parameter
Symbol
Ratings
Unit
Collector to base voltage
VCBO
–50
V
Collector to emitter voltage
VCEO
–50
V
Collector current
IC
–100
mA
Total power dissipation
PT
300
mW
Junction temperature
Tj
150
C
Storage temperature
Tstg
–55 to +150
C
Rating
of
element
Overall
2.90
1.9±0.1
0.16
+0.10
–0.06
2.8
+0.2 –0.3
1.1
+0.3 –0.1
1.1
0
to
0.1
+0.2 –0.1
1.50
(0.65)
0.4
±0.2
+0.25 –0.05
(0.95) (0.95)
0.30
+0.10
–0.05
5
4
3
1
2
+0.20
–0.05
5
10
s Electrical Characteristics (Ta=25C)
Parameter
Symbol
Conditions
min
typ
max
Unit
Collector to base voltage
VCBO
IC = –10A, IE = 0
–50
V
Collector to emitter voltage
VCEO
IC = –2mA, IB = 0
–50
V
Collector cutoff current
ICBO
VCB = –50V, IE = 0
– 0.1
A
ICEO
VCE = –50V, IB = 0
– 0.5
A
Emitter cutoff current
IEBO
VEB = –6V, IC = 0
– 0.5
mA
Forward current transfer ratio
hFE
VCE = –10V, IC = –5mA
35
Forward current transfer hFE ratio
hFE (small/large)
*1
VCE = –10V, IC = –5mA
0.5
0.99
Collector to emitter saturation voltage
VCE(sat)
IC = –10mA, IB = – 0.3mA
– 0.25
V
Output voltage high level
VOH
VCC = –5V, VB = – 0.5V, RL = 1k
–4.9
V
Output voltage low level
VOL
VCC = –5V, VB = –2.5V, RL = 1k
– 0.2
V
Transition frequency
fT
VCB = –10V, IE = 1mA, f = 200MHz
80
MHz
Input resistance
R1
–30%
10
+30%
k
Resistance ratio
R1/R2
0.8
1.0
1.2
*1 Ratio between 2 elements
5
1
Tr2
Tr1
4
32
Note) The Part number in the Parenthesis shows conventional part number.
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| XN01118(XN1118) | Composite Device - Composite Transistors |
| XN0111F(XN111F) | Composite Device - Composite Transistors |
| XN0111H(XN111H) | Composite Device - Composite Transistors |
| XN0111M(XN111M) | 複合デバイス － 複合トランジスタ |
| XN01212(XN1212) | 複合デバイス － 複合トランジスタ |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| XN01117 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | 50V V(BR)CEO | 100MA I(C) | SC-74A |
| XN01117(XN1117) | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:複合デバイス － 複合トランジスタ |
| XN01118 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | 50V V(BR)CEO | 100MA I(C) | SC-74A |
| XN01118(XN1118) | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:Composite Device - Composite Transistors |
發(fā)布緊急采購，3分鐘左右您將得到回復(fù)。