參數資料
型號: XN0111F(XN111F)
英文描述: Composite Device - Composite Transistors
中文描述: 復合設備-復合晶體管
文件頁數: 1/3頁
文件大?。?/td> 46K
代理商: XN0111F(XN111F)
1
Composite Transistors
XN01111 (XN1111)
Silicon PNP epitaxial planer transistor
For switching/digital circuits
s Features
q
Two elements incorporated into one package.
(Emitter-coupled transistors with built-in resistor)
q
Reduction of the mounting area and assembly cost by one half.
s Basic Part Number of Element
q
UNR1111(UN1111)
× 2 elements
s Absolute Maximum Ratings (Ta=25C)
1 : Collector (Tr1)
4 : Emitter
2 : Collector (Tr2)
5 : Base (Tr1)
3 : Base (Tr2)
EIAJ : SC–74A
Mini5-G1 Pakage
Unit: mm
Marking Symbol:
9S
Internal Connection
Parameter
Symbol
Ratings
Unit
Collector to base voltage
VCBO
–50
V
Collector to emitter voltage
VCEO
–50
V
Collector current
IC
–100
mA
Total power dissipation
PT
300
mW
Junction temperature
Tj
150
C
Storage temperature
Tstg
–55 to +150
C
Rating
of
element
Overall
2.90
1.9±0.1
0.16
+0.10
–0.06
2.8
+0.2 –0.3
1.1
+0.3 –0.1
1.1
0
to
0.1
+0.2 –0.1
1.50
(0.65)
0.4
±0.2
+0.25 –0.05
(0.95) (0.95)
0.30
+0.10
–0.05
5
4
3
1
2
+0.20
–0.05
5
10
s Electrical Characteristics (Ta=25C)
Parameter
Symbol
Conditions
min
typ
max
Unit
Collector to base voltage
VCBO
IC = –10A, IE = 0
–50
V
Collector to emitter voltage
VCEO
IC = –2mA, IB = 0
–50
V
Collector cutoff current
ICBO
VCB = –50V, IE = 0
– 0.1
A
ICEO
VCE = –50V, IB = 0
– 0.5
A
Emitter cutoff current
IEBO
VEB = –6V, IC = 0
– 0.5
mA
Forward current transfer ratio
hFE
VCE = –10V, IC = –5mA
35
Forward current transfer hFE ratio
hFE (small/large)
*1
VCE = –10V, IC = –5mA
0.5
0.99
Collector to emitter saturation voltage
VCE(sat)
IC = –10mA, IB = – 0.3mA
– 0.25
V
Output voltage high level
VOH
VCC = –5V, VB = – 0.5V, RL = 1k
–4.9
V
Output voltage low level
VOL
VCC = –5V, VB = –2.5V, RL = 1k
– 0.2
V
Transition frequency
fT
VCB = –10V, IE = 1mA, f = 200MHz
80
MHz
Input resistance
R1
–30%
10
+30%
k
Resistance ratio
R1/R2
0.8
1.0
1.2
*1 Ratio between 2 elements
5
1
Tr2
Tr1
4
32
Note) The Part number in the Parenthesis shows conventional part number.
相關PDF資料
PDF描述
XN0111H(XN111H) Composite Device - Composite Transistors
XN0111M(XN111M) 複合デバイス - 複合トランジスタ
XN01212(XN1212) 複合デバイス - 複合トランジスタ
XN01213(XN1213) Composite Device - Composite Transistors
XN01216(XN1216) Composite Device - Composite Transistors
相關代理商/技術參數
參數描述
XN0111H 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | 50V V(BR)CEO | 100MA I(C) | SOT-25
XN0111H(XN111H) 制造商:未知廠家 制造商全稱:未知廠家 功能描述:Composite Device - Composite Transistors
XN0111H00L 功能描述:TRANS ARRAY PNP/PNP W/RES MINI5P RoHS:是 類別:分離式半導體產品 >> 晶體管(BJT) - 陣列﹐預偏壓式 系列:- 標準包裝:3,000 系列:- 晶體管類型:1 個 NPN,1 個 PNP - 預偏壓式(雙) 電流 - 集電極 (Ic)(最大):70mA,100mA 電壓 - 集電極發(fā)射極擊穿(最大):50V 電阻器 - 基極 (R1)(歐):47k,2.2k 電阻器 - 發(fā)射極 (R2)(歐):47k 在某 Ic、Vce 時的最小直流電流增益 (hFE):70 @ 5mA,5V Ib、Ic條件下的Vce飽和度(最大):300mV @ 500µA,10mA 電流 - 集電極截止(最大):- 頻率 - 轉換:100MHz,200MHz 功率 - 最大:250mW 安裝類型:表面貼裝 封裝/外殼:6-TSSOP,SC-88,SOT-363 供應商設備封裝:PG-SOT363-6 包裝:帶卷 (TR) 其它名稱:SP000784046
XN0111M(XN111M) 制造商:未知廠家 制造商全稱:未知廠家 功能描述:複合デバイス - 複合トランジスタ