- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄385953 > XL1002 (MIMIX BROADBAND INC) 20.0-36.0 GHz GaAs MMIC Low Noise Amplifier PDF資料下載
參數(shù)資料
| 型號(hào)： | XL1002 |
| 廠商： | MIMIX BROADBAND INC |
| 元件分類： | 衰減器 |
| 英文描述： | 20.0-36.0 GHz GaAs MMIC Low Noise Amplifier |
| 中文描述： | 20000 MHz - 36000 MHz RF/MICROWAVE WIDE BAND LOW POWER AMPLIFIER |
| 封裝： | DIE-10 |
| 文件頁數(shù)： | 1/8頁 |
| 文件大小： | 822K |
| 代理商： | XL1002 |
Frequency Range (f)
Input Return Loss (S11)
Output Return Loss (S22)
Small Signal Gain (S21)
Gain Flatness (
S21)
Reverse Isolation (S12)
Noise Figure (NF)
Output Power for 1 dB Compression (P1dB)
Output Third Order Intercept Point (OIP3)
Drain Bias Voltage (V5)
Supply Current (Id)
Electrical Characteristics (Ambient Temperature T = 25
o
C)
Parameter
Units
GHz
dB
dB
dB
dB
dB
dB
dBm
dBm
VDC
mA
Min.
20.0
8.0
15.0
18.0
-
40.0
-
-
-
-
-
Typ.
-
10.0
18.0
23.0
+/-1.5
45.0
2.6
+4.0
+16.0
+5.0
85
Max.
36.0
-
-
-
-
-
4.0
-
-
+5.5
95
Mimix Broadband
’
s three stage balanced 20.0-36.0
GHz GaAs MMIC low noise amplifier has a small signal
gain of 23.0 dB with a noise figure of 2.6 dB across the
band. This MMIC uses Mimix Broadband
’
s 0.15
μ
m
GaAs PHEMT device model technology, and is based
upon electron beam lithography to ensure high
repeatability and uniformity. The chip has surface
passivation to protect and provide a rugged part with
backside via holes and gold metallization to allow
either a conductive epoxy or eutectic solder die
attach process. This device is well suited for
Millimeter-wave Point-to-Point Radio, LMDS, SATCOM
and VSAT applications.
20.0-36.0 GHz GaAs MMIC
Low Noise Amplifier
Absolute Maximum Ratings
Supply Voltage (Vd)
Supply Current (Id)
Input Power (Pin)
Storage Temperature (Tstg)
Operating Temperature (Ta)
Channel Temperature (Tch)
Page 1 of 8
General Description
+6.0 VDC
120 mA
+15.0 dBm
-65 to +165
O
C
-55 to MTTF Table
MTTF Table
(1) Channel temperature affects a device's MTBF. It is
recommended to keep channel temperature as low as
possible for maximum life.
(2) See plots for additional information.
(3) Unless otherwise indicated min/max over 20.0-36.0 GHz and biased at Vd=5V, Id=85mA.
3
1
Features
Balanced Design
Excellent Input/Output Match
Self-biased Architecture
23.0 dB Small Signal Gain
2.6 dB Noise Figure
100% On-Wafer RF, DC and Noise Figure Testing
100% Visual Inspection to MIL-STD-883
Method 2010
Chip Device Layout
1
Mimix Broadband, Inc., 10795 Rockley Rd., Houston, Texas 77099
Tel: 281.988.4600 Fax: 281.988.4615 mimixbroadband.com
Characteristic Data and Specifications are subject to change without notice.
2005 Mimix Broadband, Inc.
Export of this item may require appropriate export licensing from the U.S. Government. In purchasing these parts, U.S. Domestic customers accept
their obligation to be compliant with U.S. Export Laws.
March 2005 - Rev 01-Mar-05
L1002
3
3
3
3
2
2
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| XL1003 | 24.0-40.0 GHz GaAs MMIC Low Noise Amplifier |
| XL1004 | 35.0-45.0 GHz GaAs MMIC Low Noise Amplifier |
| XL1005 | 5.0-20.0 GHz GaAs MMIC Low Noise Amplifier |
| XL1007-QT | 3.5-8.0 GHz GaAs MMIC Packaged Low Noise Amplifier |
| XL1007-QT-0G00 | 3.5-8.0 GHz GaAs MMIC Packaged Low Noise Amplifier |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| XL1002-BD | 制造商:MIMIX 制造商全稱:MIMIX 功能描述:20.0-36.0 GHz GaAs MMIC |
| XL1002-BD_10 | 制造商:MIMIX 制造商全稱:MIMIX 功能描述:20.0-36.0 GHz GaAs MMIC |
| XL1002-BD-000V | 制造商:MIMIX 制造商全稱:MIMIX 功能描述:20.0-36.0 GHz GaAs MMIC Low Noise Amplifier |
| XL1002-BD-EV1 | 制造商:MIMIX 制造商全稱:MIMIX 功能描述:20.0-36.0 GHz GaAs MMIC Low Noise Amplifier |
| XL1003 | 制造商:MIMIX 制造商全稱:MIMIX 功能描述:24.0-40.0 GHz GaAs MMIC Low Noise Amplifier |
發(fā)布緊急采購，3分鐘左右您將得到回復(fù)。