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參數(shù)資料
| 型號： | XD1002 |
| 廠商： | MIMIX BROADBAND INC |
| 元件分類： | 衰減器 |
| 英文描述： | 0.05-50.0 GHz GaAs MMIC Distributed Amplifier |
| 中文描述： | 50 MHz - 50000 MHz RF/MICROWAVE WIDE BAND LOW POWER AMPLIFIER |
| 封裝： | DIE-5 |
| 文件頁數(shù)： | 5/6頁 |
| 文件大?。?/td> | 346K |
| 代理商： | XD1002 |
Page 5 of 6
Device Schematic
App Note [1] Biasing
- As shown in the bonding diagram, this device is operated with a single drain and gate
voltage and it also includes a separate gain control voltage. Maximum gain bias is nominally Vd=8.5V, Vg1=0.0V,
Vg2=1.0V, and Id=120mA. Gain can be adjusted by changing Vg1. It is recommended to use active biasing to keep the
currents constant as the RF power and temperature vary; this gives the most reproducible results. Depending on the
supply voltage available and the power dissipation constraints, the bias circuit may be a single transistor or a low power
operational amplifier, with a low value resistor in series with the drain supply used to sense the current. The gate of the
pHEMT is controlled to maintain correct drain current and thus drain voltage. The typical gate voltage needed to do this
is 0.0V. Typically the gate is protected with Silicon diodes to limit the applied voltage. Also, make sure to sequence the
applied voltage to ensure negative gate bias is available before applying the positive drain supply.
App Note [2] Bias Arrangement
- Each DC pad (Vd and Vg1,2) need to have DC bypass capacitance (~100-200 pF) as
close to the device as possible. Additional DC bypass capacitance (~0.01 uF) is also recommended.
Mimix Broadband, Inc., 10795 Rockley Rd., Houston, Texas 77099
Tel: 281.988.4600 Fax: 281.988.4615 mimixbroadband.com
Characteristic Data and Specifications are subject to change without notice.
2005 Mimix Broadband, Inc.
Export of this item may require appropriate export licensing from the U.S. Government. In purchasing these parts, U.S. Domestic customers accept
their obligation to be compliant with U.S. Export Laws.
0.05-50.0 GHz GaAs MMIC
Distributed Amplifier
D1002
MTTF Table (TBD)
Backplate
Temperature
55 deg Celsius
75 deg Celsius
95 deg Celsius
Channel
Temperature
deg Celsius
deg Celsius
deg Celsius
FITs
E+
E+
E+
MTTF Hours
E+
E+
E+
Rth
C/W
C/W
C/W
Bias Conditions:
Vd=8.5V, Id=120 mA
These numbers were calculated based on accelerated life test information and thermal model analysis received from the fabricating foundry.
August 2005 - Rev 04-Aug-05
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| XD1004-BD | 10.0-40.0 GHz GaAs MMIC Distributed Amplifier |
| XD1004-BD-000V | 10.0-40.0 GHz GaAs MMIC Distributed Amplifier |
| XD1004-BD-EV1 | 10.0-40.0 GHz GaAs MMIC Distributed Amplifier |
| XD1004-QT | 10.0-40.0 GHz GaAs MMIC Distributed Amplifier, QFN |
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相關(guān)代理商/技術(shù)參數(shù) |
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| XD1002_10 | 制造商:MIMIX 制造商全稱:MIMIX 功能描述:0.05-50.0 GHz GaAs MMIC |
| XD1002-BD | 制造商:MIMIX 制造商全稱:MIMIX 功能描述:0.05-50.0 GHz GaAs MMIC Distributed Amplifier |
| XD1002-BD-000V | 制造商:MIMIX 制造商全稱:MIMIX 功能描述:0.05-50.0 GHz GaAs MMIC Distributed Amplifier |
| XD1002-BD-EV1 | 制造商:MIMIX 制造商全稱:MIMIX 功能描述:0.05-50.0 GHz GaAs MMIC Distributed Amplifier |
| XD1004-BD | 制造商:MIMIX 制造商全稱:MIMIX 功能描述:10.0-40.0 GHz GaAs MMIC Distributed Amplifier |
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