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參數(shù)資料
| 型號： | XD1002 |
| 廠商： | MIMIX BROADBAND INC |
| 元件分類： | 衰減器 |
| 英文描述： | 0.05-50.0 GHz GaAs MMIC Distributed Amplifier |
| 中文描述： | 50 MHz - 50000 MHz RF/MICROWAVE WIDE BAND LOW POWER AMPLIFIER |
| 封裝： | DIE-5 |
| 文件頁數(shù)： | 1/6頁 |
| 文件大?。?/td> | 346K |
| 代理商： | XD1002 |
Mimix Broadband
’
s 0.05-50.0 GHz GaAs MMIC
distributed amplifier has a small signal gain of 9.0 dB
with a noise figure of 5.0 dB across the band. The
device also includes 15.0 dB gain control and a +9.0
dBm P1dB compression point. This MMIC uses Mimix
Broadband
’
s 0.15
μ
m GaAs PHEMT device model
technology, and is based upon electron beam
lithography to ensure high repeatability and
uniformity. The chip has surface passivation to protect
and provide a rugged part with backside via holes and
gold metallization to allow either a conductive epoxy
or eutectic solder die attach process. This device is well
suited for microwave, millimeter-wave, wideband
military, and fiber optic applications.
0.05-50.0 GHz GaAs MMIC
Distributed Amplifier
Absolute Maximum Ratings
Page 1 of 6
Features
Wide Band Driver Amplifier
9.0 dB Small Signal Gain
5.0 dB Noise Figure
15.0 dB Gain Control
+9.0 dBm P1dB Compression Point
100% On-Wafer RF, DC and Output Power Testing
100% Visual Inspection to MIL-STD-883
Method 2010
General Description
Supply Voltage (Vd)
Supply Current (Id)
Gate Bias Voltage (Vg)
Input Power (Pin)
Storage Temperature (Tstg)
Operating Temperature (Ta)
Channel Temperature (Tch)
+10.0 VDC
150 mA
+0.3 VDC
+18 dBm
-65 to +165
O
C
-55 to MTTF Table
MTTF Table
Chip Device Layout
(2) Channel temperature affects a device's MTTF. It is
recommended to keep channel temperature as low as
possible for maximum life.
2
Frequency Range (f)
Input Return Loss (S11)
Output Return Loss (S22)
Small Signal Gain (S21)
Gain Flatness (
Δ
S21)
Gain Control
Reverse Isolation (S12)
Noise Figure (NF)
Output Power for 1 dB Compression (P1dB)
Drain Bias Voltage (Vd)
Gain Control Bias (Vg1)
Gate Bias Voltage (Vg2)
Supply Current (Id) (Vd=8.5V, Vg1=0.0V, Vg2=1.0V Typical)
Electrical Characteristics (Ambient Temperature T = 25
o
C)
Parameter
Units
GHz
dB
dB
dB
dB
dB
dB
dB
dBm
VDC
VDC
VDC
mA
Min.
0.05
-
-
-
-
-
-
-
-
-
-2.0
-
-
Typ.
-
14.0
14.0
9.0
+/-1.5
15.0
40.0
5.0
+9.0
+8.5
0.0
+1.0
120
Max.
50.0
-
-
-
-
-
-
-
-
+9.0
0.1
-
140
(1) Measured using constant current.
1
2
Mimix Broadband, Inc., 10795 Rockley Rd., Houston, Texas 77099
Tel: 281.988.4600 Fax: 281.988.4615 mimixbroadband.com
Characteristic Data and Specifications are subject to change without notice.
2005 Mimix Broadband, Inc.
Export of this item may require appropriate export licensing from the U.S. Government. In purchasing these parts, U.S. Domestic customers accept
their obligation to be compliant with U.S. Export Laws.
D1002
August 2005 - Rev 04-Aug-05
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| XD1004-BD | 10.0-40.0 GHz GaAs MMIC Distributed Amplifier |
| XD1004-BD-000V | 10.0-40.0 GHz GaAs MMIC Distributed Amplifier |
| XD1004-BD-EV1 | 10.0-40.0 GHz GaAs MMIC Distributed Amplifier |
| XD1004-QT | 10.0-40.0 GHz GaAs MMIC Distributed Amplifier, QFN |
| XD1004-QT-0G00 | 10.0-40.0 GHz GaAs MMIC Distributed Amplifier, QFN |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| XD1002_10 | 制造商:MIMIX 制造商全稱:MIMIX 功能描述:0.05-50.0 GHz GaAs MMIC |
| XD1002-BD | 制造商:MIMIX 制造商全稱:MIMIX 功能描述:0.05-50.0 GHz GaAs MMIC Distributed Amplifier |
| XD1002-BD-000V | 制造商:MIMIX 制造商全稱:MIMIX 功能描述:0.05-50.0 GHz GaAs MMIC Distributed Amplifier |
| XD1002-BD-EV1 | 制造商:MIMIX 制造商全稱:MIMIX 功能描述:0.05-50.0 GHz GaAs MMIC Distributed Amplifier |
| XD1004-BD | 制造商:MIMIX 制造商全稱:MIMIX 功能描述:10.0-40.0 GHz GaAs MMIC Distributed Amplifier |
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