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參數(shù)資料
| 型號(hào)： | XD1001 |
| 廠商： | MIMIX BROADBAND INC |
| 元件分類： | 衰減器 |
| 英文描述： | 18.0-50.0 GHz GaAs MMIC Distributed Amplifier |
| 中文描述： | 18000 MHz - 50000 MHz RF/MICROWAVE WIDE BAND LOW POWER AMPLIFIER |
| 封裝： | DIE-4 |
| 文件頁數(shù)： | 5/6頁 |
| 文件大小： | 318K |
| 代理商： | XD1001 |
Page 5 of 6
Device Schematic
App Note [1] Biasing
- As shown in the bonding diagram, this device is operated with a single drain and a gain control
voltage. Maximum gain bias is nominally Vd=5.0V, Vg=0V, Id=160mA. Gain can be adjusted by changing Vg. It is
recommended to use active biasing to keep the currents constant as the RF power and temperature vary; this gives the
most reproducible results. Depending on the supply voltage available and the power dissipation constraints, the bias
circuit may be a single transistor or a low power operational amplifier, with a low value resistor in series with the drain
supply used to sense the current. The gate of the pHEMT is controlled to maintain correct drain current and thus drain
voltage. The typical gate voltage needed to do this is 0.0V. Typically the gate is protected with Silicon diodes to limit the
applied voltage. Also, make sure to sequence the applied voltage to ensure negative gate bias is available before
applying the positive drain supply.
App Note [2] Bias Arrangement
- Each DC pad (Vd and Vg) needs to have DC bypass capacitance (~100-200 pF) as
close to the device as possible. Additional DC bypass capacitance (~0.01 uF) is also recommended.
18.0-50.0 GHz GaAs MMIC
Distributed Amplifier
May 2005 - Rev 01-May-05
Mimix Broadband, Inc., 10795 Rockley Rd., Houston, Texas 77099
Tel: 281.988.4600 Fax: 281.988.4615 mimixbroadband.com
Characteristic Data and Specifications are subject to change without notice.
2005 Mimix Broadband, Inc.
Export of this item may require appropriate export licensing from the U.S. Government. In purchasing these parts, U.S. Domestic customers accept
their obligation to be compliant with U.S. Export Laws.
D1001
These numbers were calculated based on accelerated life test information and thermal model analysis received from the fabricating foundry.
Backplate
Temperature
55 deg Celsius
75 deg Celsius
95 deg Celsius
Channel
Temperature
deg Celsius
deg Celsius
deg Celsius
FITs
E+
E+
E+
MTTF Hours
E+
E+
E+
Rth
C/W
C/W
C/W
Bias Conditions:
Vd=5.0V, Id=160 mA
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| XD1004-BD-EV1 | 10.0-40.0 GHz GaAs MMIC Distributed Amplifier |
| XD1004-QT | 10.0-40.0 GHz GaAs MMIC Distributed Amplifier, QFN |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| XD1001_10 | 制造商:MIMIX 制造商全稱:MIMIX 功能描述:18.0-50.0 GHz GaAs MMIC |
| XD1001000-01 | 功能描述:網(wǎng)絡(luò)模塊 XPort Direct Device Gateway Module RoHS:否 制造商:Digi International 產(chǎn)品:ZigBee to Ethernets 處理器類型: 頻率: 隨機(jī)存取存儲(chǔ)器: 閃光: 數(shù)據(jù)速率: 接口類型:Ethernet, RF 工作電源電壓:5 V 最大工作溫度:+ 40 C 尺寸:70 mm x 95 mm x 32 mm |
| XD100100K-01 | 功能描述:網(wǎng)絡(luò)開發(fā)工具 XPort Direct Device Gateway Module Kit RoHS:否 制造商:Rabbit Semiconductor 產(chǎn)品:Development Kits 類型:Ethernet to Wi-Fi Bridges 工具用于評(píng)估:RCM6600W 數(shù)據(jù)速率:20 Mbps, 40 Mbps 接口類型:802.11 b/g, Ethernet 工作電源電壓:3.3 V |
| XD100100S-01 | 功能描述:網(wǎng)絡(luò)模塊 XPort Direct Device Gateway Mod Sample RoHS:否 制造商:Digi International 產(chǎn)品:ZigBee to Ethernets 處理器類型: 頻率: 隨機(jī)存取存儲(chǔ)器: 閃光: 數(shù)據(jù)速率: 接口類型:Ethernet, RF 工作電源電壓:5 V 最大工作溫度:+ 40 C 尺寸:70 mm x 95 mm x 32 mm |
| XD1001-BD | 制造商:MIMIX 制造商全稱:MIMIX 功能描述:18.0-50.0 GHz GaAs MMIC Distributed Amplifier |
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