參數(shù)資料
型號(hào)： XCV1600E-7FG1156C
廠商： Xilinx Inc
文件頁(yè)數(shù)： 160/233頁(yè)
文件大小： 0K
描述： IC FPGA 1.8V C-TEMP 1156-FBGA
產(chǎn)品變化通告： FPGA Family Discontinuation 18/Apr/2011
標(biāo)準(zhǔn)包裝： 1
系列： Virtex®-E
LAB/CLB數(shù)： 7776
邏輯元件/單元數(shù)： 34992
RAM 位總計(jì)： 589824
輸入/輸出數(shù)： 724
門數(shù)： 2188742
電源電壓： 1.71 V ~ 1.89 V
安裝類型： 表面貼裝
工作溫度： 0°C ~ 85°C
封裝/外殼： 1156-BBGA
供應(yīng)商設(shè)備封裝： 1156-FBGA（35x35）
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Virtex-E 1.8 V Field Programmable Gate Arrays
R
Module 2 of 4
DS022-2 (v3.0) March 21, 2014
26
Production Product Specification
— OBSOLETE — OBSOLETE — OBSOLETE — OBSOLETE —
Data Output Bus—DO[A|B]<#:0>
The data out bus reflects the contents of the memory cells
referenced by the address bus at the last active clock edge.
During a write operation, the data out bus reflects the data
in bus. The width of this bus equals the width of the port.
The allowed widths appear in Table 15.
Inverting Control Pins
The four control pins (CLK, EN, WE and RST) for each port
have independent inversion control as a configuration
option.
Address Mapping
Each port accesses the same set of 4096 memory cells
using an addressing scheme dependent on the width of the
port.
The physical RAM location addressed for a particular width
are described in the following formula (of interest only when
the two ports use different aspect ratios).
Start = ((ADDRport +1) * Widthport) –1
End = ADDRport * Widthport
Table 16 shows low order address mapping for each port
width.
Creating Larger RAM Structures
The block SelectRAM+ columns have specialized routing to
allow cascading blocks together with minimal routing delays.
This achieves wider or deeper RAM structures with a smaller
timing penalty than when using normal routing channels.
Location Constraints
Block SelectRAM+ instances can have LOC properties
attached to them to constrain the placement. The block
SelectRAM+ placement locations are separate from the
CLB location naming convention, allowing the LOC proper-
ties to transfer easily from array to array.
The LOC properties use the following form.
LOC = RAMB4_R#C#
RAMB4_R0C0 is the upper left RAMB4 location on the
device.
Conflict Resolution
The block SelectRAM+ memory is a true dual-read/write
port RAM that allows simultaneous access of the same
memory cell from both ports. When one port writes to a
given memory cell, the other port must not address that
memory cell (for a write or a read) within the clock-to-clock
setup window. The following lists specifics of port and mem-
ory cell write conflict resolution.
If both ports write to the same memory cell
simultaneously, violating the clock-to-clock setup
requirement, consider the data stored as invalid.
If one port attempts a read of the same memory cell
the other simultaneously writes, violating the
clock-to-clock setup requirement, the following occurs.
-
The write succeeds
-
The data out on the writing port accurately reflects
the data written.
-
The data out on the reading port is invalid.
Conflicts do not cause any physical damage.
Single Port Timing
Figure 33 shows a timing diagram for a single port of a block
SelectRAM+ memory. The block SelectRAM+ AC switching
characteristics are specified in the data sheet. The block
SelectRAM+ memory is initially disabled.
At the first rising edge of the CLK pin, the ADDR, DI, EN,
WE, and RST pins are sampled. The EN pin is High and the
WE pin is Low indicating a read operation. The DO bus con-
tains the contents of the memory location, 0x00, as indi-
cated by the ADDR bus.
At the second rising edge of the CLK pin, the ADDR, DI, EN,
WR, and RST pins are sampled again. The EN and WE pins
are High indicating a write operation. The DO bus mirrors the
DI bus. The DI bus is written to the memory location 0x0F.
At the third rising edge of the CLK pin, the ADDR, DI, EN,
WR, and RST pins are sampled again. The EN pin is High
and the WE pin is Low indicating a read operation. The DO
bus contains the contents of the memory location 0x7E as
indicated by the ADDR bus.
At the fourth rising edge of the CLK pin, the ADDR, DI, EN,
WR, and RST pins are sampled again. The EN pin is Low
Table 16: Port Address Mapping
Port
Width
Port
Addresses
1
4095...
1
5
1
4
1
3
1
2
1
0
9
0
8
0
7
0
6
0
5
0
4
0
3
0
2
0
1
0
2
2047...
07
06
05
04
03
02
01
00
4
1023...
03
02
01
00
8
511...
01
00
16
255...
00
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
XCV1600E-7FG1156I 功能描述:IC FPGA 1.8V I-TEMP 1156-FBGA RoHS:否 類別:集成電路 (IC) >> 嵌入式 - FPGA（現(xiàn)場(chǎng)可編程門陣列） 系列:Virtex®-E 產(chǎn)品變化通告:XC4000(E,L) Discontinuation 01/April/2002 標(biāo)準(zhǔn)包裝:24 系列:XC4000E/X LAB/CLB數(shù):100 邏輯元件/單元數(shù):238 RAM 位總計(jì):3200 輸入/輸出數(shù):80 門數(shù):3000 電源電壓:4.5 V ~ 5.5 V 安裝類型:表面貼裝 工作溫度:-40°C ~ 100°C 封裝/外殼:120-BCBGA 供應(yīng)商設(shè)備封裝:120-CPGA（34.55x34.55）
XCV1600E-7FG240C 制造商:XILINX 制造商全稱:XILINX 功能描述:Virtex⑩-E 1.8 V Field Programmable Gate Arrays
XCV1600E-7FG240I 制造商:XILINX 制造商全稱:XILINX 功能描述:Virtex-E 1.8 V Field Programmable Gate Arrays
XCV1600E-7FG680C 功能描述:IC FPGA 1.8V C-TEMP 680-FBGA RoHS:否 類別:集成電路 (IC) >> 嵌入式 - FPGA（現(xiàn)場(chǎng)可編程門陣列） 系列:Virtex®-E 產(chǎn)品變化通告:XC4000(E,L) Discontinuation 01/April/2002 標(biāo)準(zhǔn)包裝:24 系列:XC4000E/X LAB/CLB數(shù):100 邏輯元件/單元數(shù):238 RAM 位總計(jì):3200 輸入/輸出數(shù):80 門數(shù):3000 電源電壓:4.5 V ~ 5.5 V 安裝類型:表面貼裝 工作溫度:-40°C ~ 100°C 封裝/外殼:120-BCBGA 供應(yīng)商設(shè)備封裝:120-CPGA（34.55x34.55）
XCV1600E-7FG680I 功能描述:IC FPGA 1.8V I-TEMP 680-FBGA RoHS:否 類別:集成電路 (IC) >> 嵌入式 - FPGA（現(xiàn)場(chǎng)可編程門陣列） 系列:Virtex®-E 產(chǎn)品變化通告:XC4000(E,L) Discontinuation 01/April/2002 標(biāo)準(zhǔn)包裝:24 系列:XC4000E/X LAB/CLB數(shù):100 邏輯元件/單元數(shù):238 RAM 位總計(jì):3200 輸入/輸出數(shù):80 門數(shù):3000 電源電壓:4.5 V ~ 5.5 V 安裝類型:表面貼裝 工作溫度:-40°C ~ 100°C 封裝/外殼:120-BCBGA 供應(yīng)商設(shè)備封裝:120-CPGA（34.55x34.55）
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