X84256
Preliminary
5
—Write ‘1’—when reading data
—Read/Read/Write ‘1’—after data is written to device,
but before entering the NV write sequence.
—the device powers-up;
—a nonvolatile write operation completes.
While a sequential read is in progress, the device remains
in an active state. This state draws more current than the
idle state, but not as much as during a read itself. To go
back to the lowest power condition, an invalid condition is
created by writing a ‘1’ after the last bit of a read operation.
Write Protection
The following circuitry has been included to prevent
inadvertent nonvolatile writes:
—A special “start nonvolatile write” command sequence
is required to start a nonvolatile write cycle.
ABSOLUTE MAXIMUM RATINGS*
Temperature under Bias......................–65°C to +135°C
Storage Temperature...........................–65°C to +150°C
Terminal Voltage with
Respect to V
SS
.......................................–1V to +7V
DC Output Current...................................................5mA
Lead Temperature (Soldering, 10 seconds)..........300°C
RECOMMENDED OPERATING CONDITIONS
*COMMENT
Stresses above those listed under “Absolute Maximum
Ratings” may cause permanent damage to the device.
This is a stress rating only and the functional operation
of the device at these or any other conditions above
those indicated in the operational sections of this speci-
fication is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device
reliability.
Temperature
Commercial
Industrial
Military
Min.
0°C
–40°C
–55°C
Max.
+70°C
+85°C
+125°C
Supply Voltage
X84256
X84256 – 2.5
X84256 – 1.8
Limits
5V
±
2.5V to 5.5V
1.8V to 3.6V
10%
D.C. OPERATING CHARACTERISTICS (V
(Over the recommended operating conditions, unless otherwise specified.)
CC
= 5V
±
10%)
Notes:
(1) V
IL
Min. and V
IH
Max. are for reference only and are not tested.
Symbol
Parameter
Limits
Units
Test Conditions
Min.
Max.
I
CC1
V
CC
Supply Current (Read)
1
mA
OE = V
I/O = Open, CE clocking @ 10MHz
I
CC
During Nonvolatile Write Cycle
All Inputs at CMOS Levels
CE = V
CC
, Other Inputs = V
V
IN
= V
SS
to V
CC
V
OUT
= V
SS
to V
CC
IL
, WE = V
IH
,
I
CC2
V
CC
Supply Current (Write)
3
mA
I
SB1
I
LI
I
LO
V
CC
Standby Current
1
μ
A
CC
or V
SS
Input Leakage Current
10
μ
A
Output Leakage Current
10
μ
A
V
lL
(1)
Input LOW Voltage
–0.5
V
CC
x 0.3
V
V
IH
(1)
Input HIGH Voltage
V
CC
x 0.7
V
CC
+ 0.5
V
V
OL
Output LOW Voltage
0.4
V
I
OL
I
OH
= 2.1mA
V
OH
Output HIGH Voltage
V
CC
– 0.8
V
= –1mA