參數(shù)資料
型號(hào)： X4C105V20
英文描述： ATMEGA166 IN WAFER(MCU AVR)
中文描述： I2C串行EEPROM，帶有監(jiān)控功能
文件頁(yè)數(shù)： 10/19頁(yè)
文件大?。?/td> 258K
代理商： X4C105V20
X4C105
Characteristics subject to change without notice.
10 of 19
REV 1.0.1 6/14/01
www.xicor.com
ABSOLUTE MAXIMUM RATINGS
Temperature under bias .................... -65°C to +135°C
Storage temperature......................... -65°C to +150°C
Voltage on any pin with
respect to ground.................................-1.0V to 7.0V
DC output current................................................ 5 mA
Lead temperature (soldering, 10 seconds).........300°C
Stresses above those listed under “Absolute Maximum
Ratings” may cause permanent damage to the device.
This is a stress rating only; the functional operation of
the device (at these or any other conditions above
those indicated in the operational sections of this specifi-
cation) is not implied. Exposure to absolute maximum rating
conditions for extended periods may affect device reliability.
DC OPERATING CHARACTERISTICS
V
CC
= 3.0 to 3.6V at -40
°
C to +85
°
C unless otherwise specified.
Notes:
(1) The device enters the active state after any start, and remains active until: 9 clock cycles later if the device select bits in the slave
address byte are incorrect; 200ns after a stop ending a read operation; or t
(2) The device goes into standby: 200ns after any stop, except those that initiate a high voltage write cycle; t
high voltage cycle; or 9 clock cycles after any start that is not followed by the correct device select bits in the slave address byte.
(3) V
IL
min. and V
IH
max. are for reference only and are not tested.
WC
after a stop ending a write operation.
WC
after a stop that initiates a
Symbol
I
CC1
Parameter
Min.
Max.
2.0
Unit
mA
Test Conditions
x 0.1, V
IH
= V
SDA = Read/Write Operation, CE, OE, WE,
D0–D3 = V
IH
; O0–O3, RESET = Open CAP is
tied to V
CC
; V
CC
> V
TRIP
V
IL
= V
CC
x 0.1, V
IH
= V
SDA = V
IH
; WP, S1, S2 = V
D0–D3 = V
IH
; O0–O3, RESET = Open CAP is
tied to V
CC
. Test during the N.V. write cycle.
V
IL
= V
CC
x 0.1, V
IH
= V
SDA = V
IH
; WP, S1, S2 = V
OE = V
IL
,
D0–D3, O0–O3, RESET = Open CAP
is tied to V
CC
; V
CC
> V
TRIP
V
IL
= V
CC
x 0.1, V
IH
= V
CC
x 0.9, SCL,
SDA = V
IH
; WP, S1, S2 =V
IL
,
OE = V
IH
; CE,
WE = V
IL
,
D0-D3 = V
IL
or V
IH
, O0-O3, RESET =
Open CAP is tied to V
CC
; V
CC
> V
TRIP
V
IL
= V
CC
x 0.1, V
IH
= V
CC
x 0.9, SCL, SDA,
V
IH
; WP, S1, S2 = V
IL
,
WE, CE, OE = V
IH
;
D0–D3, O0–O3, RESET = Open CAP is tied to
V
CC,
V
CC
< V
TRIP
for Store; V
CC
> V
TRIP
for
Recall
V
IL
= V
CC
x 0.1, V
IH
= V
CC
x 0.9, SCL, SDA,
CE, WE, OE, D0–D3, = V
IH
, WP = V
IL
,
O0–O3,
RESET = Open; CAP is tied to V
CC
V
IN
= GND to V
CC
V
SDA
= GND to V
CC;
Device is in Standby
(2)
(1)
Active supply current serial
read or serial write (does
not include the nonvolatile
store operation)
Average active supply
current during serial non-
volatile store operation
V
IL
= V
CC
CC
x 0.9, f
SCL
= 400kHz,
I
CC2
(1)
3.0
mA
CC
x 0.9, SCL,
IL
, CE, OE, WE,
I
CC3
(1)
Active supply current
volatile NOVRAM read
3.0
mA
CC
x 0.9, SCL,
IL
, WE = V
IH
; CE,
I
CC4
(1)
Active supply current
volatile NOVRAM write
3.0
mA
I
CC5
(1)
Average active supply
current over NOVRAM
store, or active current
during recall
3.0
mA
I
SB1
(1)
Standby current
50
μ
A
I
LI
I
LO
V
IL
(3)
V
IH
(3
V
HYS
Input leakage current
Output leakage current
Input LOW voltage
Input HIGH voltage
Schmitt trigger input
hysteresis
Output LOW voltage
Output HIGH voltage
10
10
μ
A
μ
A
V
V
V
-0.5
V
CC
x 0.3
V
CC
+ 0.5
V
CC
x 0.7
.05 x V
CC
V
OL
V
OH
0.4
V
V
I
OL
= 2.0mA, V
CC
= 3.3V
I
OH
= -1mA, V
CC
= 3.3V
V
CC
– 0.4
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