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參數(shù)資料
| 型號： | X2N5911 |
| 英文描述： | TRANSISTOR | JFET | N-CHANNEL | DUAL | 25V V(BR)DSS | 40MA I(DSS) | CHIP |
| 中文描述： | 晶體管|場效應(yīng)| N溝道|雙| 25V的五（巴西）直| 40MA我（直）|芯片 |
| 文件頁數(shù)： | 2/2頁 |
| 文件大?。?/td> | 21K |
| 代理商： | X2N5911 |
2N5911 /2N5912
C ORPORATION
ELECTRICAL CHARACTERISTICS
(Continued) (T
A
= 25
o
C unless otherwise specified)
SYMBOL
PARAMETER
2N5911
2N5912
UNITS
TEST CONDITIONS
MIN MAX MIN MAX
| I
G1
-I
G2
|
Differential Gate Current
20
20
nA
V
DG
= 10V, I
D
= 5mA
T
A
= 125
o
C
I
DSS1
I
DSS2
Saturation Drain Current Ratio
0.95
1
0.95
1
V
DS
= 10V, V
GS
= 0
(Pulsewidth 300
μ
A, duty cycle
≤
3%)
| V
GS1
-V
GS2
|
Differential Gate-Source Voltage
10
15
mV
V
DG
= 10V, I
D
= 5mA
| V
GS1
V
GS2
|
T
Gate-Source Voltage
Differential Drift (Measured at
end points, T
A
and T
B
)
20
40
μ
V/
o
C
T
A
= 25
o
C
T
B
= 125
o
C
T
A
= -55
o
C
T
B
= 25
o
C
20
40
g
fs1
g
fs2
Transconductance Ratio
0.95
1
0.95
1
f = 1kHz
NOTE 1:
For design reference only, not 100% tested.
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