參數(shù)資料
型號(hào)： X2N5911
英文描述： TRANSISTOR | JFET | N-CHANNEL | DUAL | 25V V(BR)DSS | 40MA I(DSS) | CHIP
中文描述： 晶體管|場(chǎng)效應(yīng)| N溝道|雙| 25V的五（巴西）直| 40MA我（直）|芯片
文件頁(yè)數(shù)： 1/2頁(yè)
文件大?。?/td> 21K
代理商： X2N5911
Dual N-Channel JFET
HghFrequency Ampifier
2N5911 /2N5912
FEATURES
Tight Tracking
Low Insertion Loss
Good Matching
ABSOLUTE MAXIMUM RATINGS
(T
A
= 25
o
C unless otherwise specified)
Gate-Drain or Gate-Source Voltage . . . . . . . . . . . . . . . . -25V
Gate Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 50mA
Storage Temperature Range . . . . . . . . . . . . . -65
o
C to +200
o
C
Operating Temperature Range . . . . . . . . . . . -55
o
C to +150
o
C
Lead Temperature (Soldering, 10sec). . . . . . . . . . . . . +300
o
C
One Side
367mW
3.0mW/
o
C
Both Sides
500mW
4.0mW/
o
C
Power Dissipation
Derate above 25
o
C
NOTE:
Stresses above those listed under "Absolute Maximum
Ratings" may cause permanent damage to the device. These are
stress ratings only and functional operation of the device at these or
any other conditions above those indicated in the operational sections
of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
ORDERING INFORMATION
Part
2N5911-12
X2N5912
Package
Hermetic TO-99
Sorted Chips in Carriers
Temperature Range
-55
o
C to +150
o
C
-55
o
C to +150
o
C
C ORPORATION
PIN CONFIGURATION
S2
G1
D2
D1
G2
S1
C
TO-99
ELECTRICAL CHARACTERISTICS
(T
A
= 25
o
C unless otherwise specified)
SYMBOL
PARAMETER
MIN
MAX
UNITS
TEST CONDITIONS
I
GSS
Gate Reverse Current
-100
pA
V
GS
= -15V, V
DS
= 0
-250
nA
T
A
= 150
o
C
BV
GSS
Gate Reverse Breakdown Voltage
-25
V
I
G
= -1
μ
A, V
DS
= 0
V
GS(off)
Gate-Source Cutoff Voltage
-1
-5
V
DS
= 10V, I
D
= 1nA
V
GS
Gate-Source Voltage
-0.3
-4
V
DG
= 10V, I
D
= 5mA
I
G
Gate Operating Current
-100
pA
-100
nA
T
A
= 150
o
C
I
DSS
Saturation Drain Current (Pulsewidth 300
μ
s, duty cycle
≤
3%)
7
40
mA
V
DS
= 10V, V
GS
= 0V
g
fs
Common-Source Forward Transconductance
5000
10,000
μ
S
V
DG
= 10V, I
D
= 5mA
f = 1kHz
g
fs
Common-Source Forward Transconductance (Note 1)
5000
10,000
f = 100MHz
g
os
Common-Source Output Conductance
100
f = 1kHz
g
oss
Common-Source Output Conductance (Note 1)
150
f = 100MHz
C
iss
Common-Source Input Capacitance (Note 1)
5
pF
f = 1MHz
C
rss
Common-Source Reverse Transfer Capacitance (Note 1)
1.2
e
n
Equivalent Short Circuit Input Noise Voltage (Note 1)
20
nV
√
Hz
f = 10kHz
NF
Spot Noise Figure (Note 1)
1
dB
f = 10kHz
R
G
= 100k
CJ1
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