參數(shù)資料
型號: X28HT512
英文描述: High Temperature, 5 Volt, Byte Alterable EEPROM(工作溫度可達(dá)170℃,5V,字節(jié)可改變的EEPROM)
中文描述: 高溫,5伏,可變字節(jié)的EEPROM(工作溫度可達(dá)170℃,5V的,字節(jié)可改變的EEPROM中)
文件頁數(shù): 1/14頁
文件大?。?/td> 135K
代理商: X28HT512
X28HT512
1
512K
X28HT512
64K x 8 Bit
High Temperature, 5 Volt, Byte Alterable E
2
PROM
Xicor, Inc. 1991, 1995, 1996 Patents Pending
6614-1.4 6/19/96 T2/C2/D2 NS
Characteristics subject to change without notice
FEATURES
170
°
C Full Functionality
Simple Byte and Page Write
—Single 5V Supply
—Self-Timed
—No Erase Before Write
—No Complex Programming Algorithms
—No Overerase Problem
Highly Reliable Direct Write Cell
—Endurance: 10,000 Write Cycles
—Data Retention: 100 Years
—Higher Temperature Functionality is Possible
by Operating in the Byte Mode
DESCRIPTION
The X28HT512 is an 64K x 8 CMOS E
2
PROM, fabri-
cated with Xicor’s proprietary, high performance, float-
ing gate CMOS technology which provides Xicor prod-
ucts superior high temperature performance character-
istics. Like all Xicor programmable nonvolatile memo-
ries the X28HT512 is a 5V only device. The X28HT512
features the JEDEC approved pinout for bytewide memo-
ries, compatible with industry standard EPROMS.
The X28HT512 supports a 128-byte page write opera-
tion, effectively providing a 39
μ
s/byte write cycle and
enabling the entire memory to be written in less than 2.5
seconds.
6614 FHD F02.1
VBB
NC
A15
A12
A7
A6
A5
A4
A3
A2
A1
A0
I/O0
I/O1
I/O2
VSS
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
32
31
30
29
28
27
26
25
24
23
22
21
20
19
18
17
VCC
WE
NC
A14
A13
A8
A9
A11
OE
A10
CE
I/O7
I/O6
I/O5
I/04
I/O3
X28HT512
FLAT PACK
CERDIP
SOIC (R)
PIN CONFIGURATION
X28HT512
(BOTTOM VIEW)
14
A
0
16
I/O
1
18
V
SS
11
A
3
9
A
5
7
A
7
15
I/O
0
17
I/O
2
19
I/O
3
5
A
15
2
NC
36
VCC
20
I/O
4
21
I/O
5
34
NC
23
I/O
7
25
A
10
27
A
11
29
A
8
22
I/O
6
32
NC
6614 FHD F23
24
CE
26
OE
28
A
9
30
A
13
13
A
1
12
A
2
10
A
4
8
A
6
4
3
VBB
1
NC
35
WE
33
NC
31
A
14
6
A
12
PGA
NC
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