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參數(shù)資料
| 型號(hào)： | X28C64TMB-25 |
| 英文描述： | 5 Volt, Byte Alterable E2PROM |
| 中文描述： | 5伏，可變E2PROM的字節(jié) |
| 文件頁數(shù)： | 14/25頁 |
| 文件大?。?/td> | 110K |
| 代理商： | X28C64TMB-25 |
14
X28C64
WE
OE
(8)
LAST BYTE
BYTE 0
BYTE 1
BYTE 2
BYTE n
BYTE n+1
BYTE n+2
tWP
tWPH
tBLC
tWC
CE
ADDRESS *
(9)
I/O
*For each successive write within the page write operation, A6–A12 should be the same or
CE
Controlled Write Cycle
3853 FHD F07
Page Write Cycle
3853 FHD F08
Notes:
(8) Between successive byte writes within a page write operation,
OE
can be strobed LOW: e.g. this can be done with
CE
and
WE
HIGH to fetch data from another memory device within the system for the next write; or with
WE
HIGH and
CE
LOW effectively
performing a polling operation.
(9) The timings shown above are unique to page write operations. Individual byte load operations within the page write must
conform to either the
CE
or
WE
controlled write cycle timing.
ADDRESS
tAS
tOEH
tWC
tAH
tOES
tCS
tDV
tDS
tDH
tCH
CE
WE
OE
DATA IN
DATA OUT
HIGH Z
DATA VALID
tCW
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