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參數(shù)資料
| 型號： | X1049A |
| 廠商： | 友順科技股份有限公司 |
| 英文描述： | HIGH GAIN TRANSISTOR |
| 中文描述： | 高增益晶體管 |
| 文件頁數(shù)： | 2/3頁 |
| 文件大小： | 122K |
| 代理商： | X1049A |
UTC X1049A N P N EPITAXIAL SILICON TRANSISTOR
UTC
UNISONIC TECHNOLOGIES CO. LTD
2
QW-R201-061,A
PARAMETER
SYMBOL
V
CE(sat)
CONDITIONS
MIN
TYP
30
60
125
155
890
820
430
450
450
350
180
45
125
380
MAX
70
130
280
400
980
920
1200
UNIT
Collector-Emitter Saturation Voltage
IC=0.5A, IB=10mA*
IC=1A, IB=10mA*
IC=2A, IB=10mA*
IC=4A, IB=50mA*
I
C
=4A, I
B
=50mA*
I
C
=4A, V
CE
=2V*
I
C
=10mA, V
CE
=2V*
I
C
=0.5A, V
CE
=2V*
I
C
=1A, V
CE
=2V*
I
C
=4A, V
CE
=2V*
I
C
=20A, V
CE
=2V*
I
C
=50mA, V
CE
=10V,f=50MHz
V
CB
=10V, f=1MHz
I
C
=4A, I
B
=40mA, V
CC
=10V
I
C
=4A, I
B
=±40mA, V
CC
=10V
mV
Base-Emitter Saturation Voltage
Base-Emitter Turn-On Voltage
DC Current Gain
V
BE(sat)
V
BE(on)
h
FE
mV
mV
250
300
300
200
7
Transition Frequency
Output Capacitance
Turn - On Time
Turn -Off Time
*Measured under pulsed conditions. Pulse width=300μs. Duty cycle
≤
2%
TYPICAL CHARACTERISTICS
V
CE
(sat) - I
C
f
T
MHz
pF
ns
ns
C
obo
t
on
t
off
60
1.0
0.8
0.6
0.4
V
C
(
0.2
0
1mA
10mA
100mA
IC-Collector Current
1A
10A
100A
+25
℃
Ic/I
B
=10
Ic/I
B
=50
Ic/I
B
=100
Ic/I
B
=200
700
600
500
400
300
200
h
100
0
1mA
10mA
100mA
IC-Collector Current
hFE - I
C
1A
10A
100A
V
CE
=2V
+100
℃
+25
℃
-55
℃
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0
1mA
10mA
100mA
IC-Collector Current
1A
10A
100A
V
BE
(sat) - I
C
Ic/I
B
=100
-55
℃
+25
℃
+100
℃
+175
℃
1.0
0.8
0.6
0.4
V
C
(
0.2
0
1mA
10mA
100mA
IC-Collector Current
1A
10A
100A
V
CE
(sat) - I
C
-55
℃
+25
℃
+100
℃
+175
℃
Ic/I
B
=100
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| X1049A_12 | 制造商:UTC-IC 制造商全稱:UTC-IC 功能描述:HIGH GAIN TRANSISTOR |
| X1049AG-T92-B | 制造商:UTC-IC 制造商全稱:UTC-IC 功能描述:HIGH GAIN TRANSISTOR |
| X1049AG-T92-K | 制造商:UTC-IC 制造商全稱:UTC-IC 功能描述:HIGH GAIN TRANSISTOR |
| X1049AG-T92-R | 制造商:UTC-IC 制造商全稱:UTC-IC 功能描述:HIGH GAIN TRANSISTOR |
| X1049AL-T92-B | 制造商:UTC-IC 制造商全稱:UTC-IC 功能描述:HIGH GAIN TRANSISTOR |
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