參數(shù)資料
型號(hào): X1049A
廠商: 友順科技股份有限公司
英文描述: HIGH GAIN TRANSISTOR
中文描述: 高增益晶體管
文件頁數(shù): 1/3頁
文件大?。?/td> 122K
代理商: X1049A
UTC X1049A N P N EPITAXIAL SILICON TRANSISTOR
UTC
UNISONIC TECHNOLOGIES CO. LTD
1
QW-R201-061,A
HIGH GAIN TRANSISTOR
FEATURES
*V
CEV
= 80V
*High Gain
*20 Amps pulse current
APPLICATIONS
*LCD Backlight converters
*Emergency lighting
*DC-DC converters
TO-92
1
1:EMITTER 2:BASE 3:COLLECTOR
ABSOLUTE MAXIMUM RATINGS
(Ta=25
)
PARAMETER
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
DC
Collector Current
Pulse
Base Current
Power Dissipation
Junction Temperature
Storage Temperature
ELECTRICAL CHARACTERISTICS
(Ta=25
unless otherwise specified).
PARAMETER
SYMBOL
Collector-Base Breakdown Voltage
V
CBO
Collector-Emitter Breakdown Voltage
V
CEO
Collector-Emitter Breakdown Voltage
V
CES
Collector-Emitter Breakdown Voltage
V
CEV
Emitter-Base Breakdown Voltage
V
EBO
Collector Cut-Off Current
I
CBO
Emitter Cut-Off Current
I
EBO
Collector Emitter Cut-Off Current
I
CES
SYMBOL
V
CBO
V
CEO
V
EBO
RATINGS
80
25
5
4
20
500
1
-55 ~+200
-55~ +200
UNIT
V
V
V
A
I
C
I
B
P
D
T
j
T
stg
mA
W
CONDITIONS
MIN
80
25
80
80
5
TYP
120
35
120
120
8.75
0.3
0.3
0.3
MAX
10
10
10
UNIT
V
V
V
V
V
nA
nA
nA
I
C
=100μA
I
C
=10mA
I
C
=100μA
I
C
=100μA, V
EB
=1V
I
E
=100μA
V
CB
=50V
V
EB
=4V
V
CES
=50V
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